PNP Transistor. MMBT2907A Datasheet

MMBT2907A Transistor. Datasheet pdf. Equivalent

Part MMBT2907A
Description PNP Transistor
Feature PNP General Purpose Transistor MMBT2907A FEATURES • Ideal for Medium Power Amplification and Switc.
Manufacture LITE-ON
Datasheet
Download MMBT2907A Datasheet

® MMBT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA T MMBT2907A Datasheet
Features • Epitaxial Planar Die Construction • Ideal for Low MMBT2907A Datasheet
MMBT2907A Small Signal Transistor (PNP) TO-236AB (SOT-23) .1 MMBT2907A Datasheet
MCC Features • •   omponents 21201 Itasca S MMBT2907A Datasheet
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A Discret MMBT2907A Datasheet
PNP Silicon Switching Transistor • Low collector-emitter sat MMBT2907A Datasheet
MMBT2907A MMBT2907A SMD General Purpose PNP Transistors SMD MMBT2907A Datasheet
General Purpose Transistor (PNP) COMCHIP www.comchip tech MMBT2907A Datasheet
UNISONIC TECHNOLOGIES CO., LTD MMBT2907A PNP SILICON TRANS MMBT2907A Datasheet
9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: (818) 701-4 MMBT2907A Datasheet
Recommendation Recommendation Datasheet MMBT2907A Datasheet





MMBT2907A
PNP General Purpose Transistor
MMBT2907A
FEATURES
Ideal for Medium Power Amplification and
Switching
Complementary PNP Type available(MMBT2222A)
MECHANICAL DATA
Case: SOT-23 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
TJ
TSTG
Electrical Characteristics @ TA = 25unless otherwise specified
Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Test Condition
IC=-10µA,IE=0
IC=-10mA,IB=0
IE=-10µA,IC=0
VCB=-50V,IE=0
VEB=-3V,IC=0
VCE=-30V,VBE(off)=-0.5V
VCE=-10V,IC=-150mA
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-20V,IC=-50mA,
f=100MHz
VCC=-30V,
IC=-150mA , IB1=-15mA
VCC=-6V, IC=-150mA
IB1=-IB2=-15mA
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
ICEX
hFE1
hFE2
hFE3
hFE4
hFE5
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Td
Tr
Ts
Tf
Value
-60
-60
-5
-600
250
500
150
-55~+150
Unit
V
V
V
mA
mW
/W
Min.
Typ.
Max.
Unit
-60 V
-60 V
-5 V
-20 nA
-10 nA
-50 nA
100 300
75
100
100
50
-0.4 V
-1.6 V
-1.3 V
-2.6 V
200 MHz
10 nS
25 nS
225 nS
60 nS
REV.3 , Jan - 2013, KSPR11



MMBT2907A
SOT-23 Outline Dimension
Device Marking:
Symbol
A
B
C
D
G
J
K
L
S
V
Dimension In Millimeters
Min Max.
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.085
0.177
0.35 0.69
0.89 1.02
2.10 2.64
0.45 0.60
Note1:
Odd Year J O L C K B P D M E G F
Even Year W N Y T R H A I U X Z S





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)