Document
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Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23
●FEATURES
1)We declare that the material of product compliant
with RoHS requirements and Halogen Free.
2)ESD Protected:1000V
3)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
2N7002LT1G
702 3000/Tape&Reel
2N7002LT1G
Simplified Schematic
●MAXIMUM RATINGS(Ta = 25°C)
Rating
Symbol
Drain–Source Voltage
VDSS
Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR
Value 60
60
Drain Current – Continuous TC = 25°C (Note 1.)
TC = 100°C (Note 1.) – Pulsed (Note 2.)
Gate–Source Voltage – Continuous – Non–repetitive (tp≤ 50μs)
ID ID IDM
VGS VGSM
±115 ±75 ±800
±20 ±40
Unit Vdc Vdc mAdc
Vdc Vpk
Gate 1
3 Drain
Source 2
(Top View)
●THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR–5 (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C Thermal Resistance, Junction to Ambient
Symbo Max l 225
PD 1.8
RθJA 556
PD RθJA
300 2.4 417
Unit mW mW/°C
mW mW/°C
Junction and Storage Temperature
TJ, Tstg -55 to +150
1. The Power Dissipation of the package may result in a lower continuous 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
May,2015
Rev.A 1/4
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●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
Characteristic
OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10μAdc)
Zero Gate Voltage Drain Current TJ = 25°C
(VGS = 0, VDS = 60 Vdc)
TJ = 125°C
Symbol Min.
V(BR)DSS 60
IDSS
–
–
Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = – 20 Vdc)
ON CHARACTERISTICS (Note 2.)
IGSSF IGSSR
Gate Threshold Voltage (VDS = VGS, ID = 250μAdc)
On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
Forward Transconductance
TC = 125°C
(VDS≥ 2.0 VDS(on), ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
VGS(th) ID(on) VDS(on)
rDS(on) gFS Ciss
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 2.)
Crss
Turn−On Delay Time (V DD = 25 Vdc , ID =500 mAdc, RG td(on) Turn−Off Delay Time = 25 ,RL = 50 ,Vgen = 10V) td(off)
BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 115 mAdc, V GS = 0V) VSD
Source Current Continuous (Body Diode)
IS
Source Current Pulsed
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
ISM
– –
1
500
– – – – – – 80
– –
–
– –
– – –
2N7002LT1G
Typ. Max. Unit – – Vdc
– 1.0 μAdc – 500 – 1 μAdc
– -1 μAdc
1.6 2 ––
Vdc mA
–
Vdc 3.75
– 0.375
1.4 7.5 – 13.5 Ohms 1.8 7.5 – 13.5
– – mmhos
17 50 pF
10 25 pF
2.5 5.0 pF
7 20 ns 11 40 ns
– –1.5 Vdc – –115 mAdc – –800 mAdc
May,2015
Rev.A 2/4
ID (A)
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2N7002LT1G
ELECTRICAL CHARACTERISTIC CURVES
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
0 1 2 3 4 5 6 7 8 9 10
VDS (V) VGS=3V VGS=6V VGS=9V
VGS=4V VGS=7V VGS=10V
VGS=5V VGS=8V
FIG1.On-Region Characteristics
ID (A)
1.0
0.8
0.6
0.4
0.2
0.0 0 1 2 3 4 5 6 7 8 9 10
VGS (V) -55℃
25℃
125℃
FIG2.Transfer Characteristics
VGS=10V ID=200mA 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
-60-40-20 0 20 40 60 80 100120140
T(℃)
FIG.3 Temperature vs Static Drain- Source On-Resistance
VGS(th)(Normalized)
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
-60-40-20 0 20 40 60 80 100120140
T (℃)
FIG.4 Temperature vs Gate Threshold
RDS(on) (Ω)
May,2015
Rev.A 3/4
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2N7002LT1G
Dimension Outline:
A L
3 BS
12
VG
C
D
H K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
Soldering Footprint:
0.037 0.95
0.037 0.95
0.035 0.9
0.079 2.0
0.031 0.8
inches mm
May,2015
Rev.A 4/4
.