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2N7002LT1G Dataheets PDF



Part Number 2N7002LT1G
Manufacturers DCY
Logo DCY
Description Small Signal MOSFET
Datasheet 2N7002LT1G Datasheet2N7002LT1G Datasheet (PDF)

WWW.DCY-CHINA.NET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ●FEATURES 1)We declare that the material of product compliant with RoHS requirements and Halogen Free. 2)ESD Protected:1000V 3)S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 2N7002LT1G 702 3000/Tape&Reel 2N7002LT1G Simplified Schematic ●MAXIMUM RATING.

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WWW.DCY-CHINA.NET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ●FEATURES 1)We declare that the material of product compliant with RoHS requirements and Halogen Free. 2)ESD Protected:1000V 3)S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 2N7002LT1G 702 3000/Tape&Reel 2N7002LT1G Simplified Schematic ●MAXIMUM RATINGS(Ta = 25°C) Rating Symbol Drain–Source Voltage VDSS Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR Value 60 60 Drain Current – Continuous TC = 25°C (Note 1.) TC = 100°C (Note 1.) – Pulsed (Note 2.) Gate–Source Voltage – Continuous – Non–repetitive (tp≤ 50μs) ID ID IDM VGS VGSM ±115 ±75 ±800 ±20 ±40 Unit Vdc Vdc mAdc Vdc Vpk Gate 1 3 Drain Source 2 (Top View) ●THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Symbo Max l 225 PD 1.8 RθJA 556 PD RθJA 300 2.4 417 Unit mW mW/°C mW mW/°C Junction and Storage Temperature TJ, Tstg -55 to +150 1. The Power Dissipation of the package may result in a lower continuous 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. May,2015 Rev.A 1/4 WWW.DCY-CHINA.NET ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10μAdc) Zero Gate Voltage Drain Current TJ = 25°C (VGS = 0, VDS = 60 Vdc) TJ = 125°C Symbol Min. V(BR)DSS 60 IDSS – – Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = – 20 Vdc) ON CHARACTERISTICS (Note 2.) IGSSF IGSSR Gate Threshold Voltage (VDS = VGS, ID = 250μAdc) On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25°C TC = 125°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C Forward Transconductance TC = 125°C (VDS≥ 2.0 VDS(on), ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) VGS(th) ID(on) VDS(on) rDS(on) gFS Ciss Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 2.) Crss Turn−On Delay Time (V DD = 25 Vdc , ID =500 mAdc, RG td(on) Turn−Off Delay Time = 25 ,RL = 50  ,Vgen = 10V) td(off) BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 115 mAdc, V GS = 0V) VSD Source Current Continuous (Body Diode) IS Source Current Pulsed 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. ISM – – 1 500 – – – – – – 80 – – – – – – – – 2N7002LT1G Typ. Max. Unit – – Vdc – 1.0 μAdc – 500 – 1 μAdc – -1 μAdc 1.6 2 –– Vdc mA – Vdc 3.75 – 0.375 1.4 7.5 – 13.5 Ohms 1.8 7.5 – 13.5 – – mmhos 17 50 pF 10 25 pF 2.5 5.0 pF 7 20 ns 11 40 ns – –1.5 Vdc – –115 mAdc – –800 mAdc May,2015 Rev.A 2/4 ID (A) WWW.DCY-CHINA.NET 2N7002LT1G ELECTRICAL CHARACTERISTIC CURVES 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 VDS (V) VGS=3V VGS=6V VGS=9V VGS=4V VGS=7V VGS=10V VGS=5V VGS=8V FIG1.On-Region Characteristics ID (A) 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 VGS (V) -55℃ 25℃ 125℃ FIG2.Transfer Characteristics VGS=10V ID=200mA 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60-40-20 0 20 40 60 80 100120140 T(℃) FIG.3 Temperature vs Static Drain- Source On-Resistance VGS(th)(Normalized) 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -60-40-20 0 20 40 60 80 100120140 T (℃) FIG.4 Temperature vs Gate Threshold RDS(on) (Ω) May,2015 Rev.A 3/4 WWW.DCY-CHINA.NET 2N7002LT1G Dimension Outline: A L 3 BS 12 VG C D H K SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 J L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 Soldering Footprint: 0.037 0.95 0.037 0.95 0.035 0.9 0.079 2.0 0.031 0.8 inches mm May,2015 Rev.A 4/4 .


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