BSP16T1G Datasheet (data sheet) PDF





BSP16T1G Datasheet, High Voltage Transistors

BSP16T1G   BSP16T1G  

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BSP16T1G High Voltage Transistors PNP S ilicon Features  These Devices are P b--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitte r Voltage Collector-Base Voltage Emitte r-Base Voltage Collector Current Total Device Dissipation @ TA = 25C (Note 1) VCEO VCBO VEBO IC PD --300 --350 - -6.0 --100 1.5 Vdc Vdc Vdc mAdc W Sto rage Temperature Range PD --65 to C +150 Junction Temperature TJ 150 C THERMAL CHARACTERISTICS Characte ristic Symbol Max Unit Thermal Resi stance, Junction--to--Ambient RθJA 8 3.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maxim

BSP16T1G Datasheet, High Voltage Transistors

BSP16T1G  
um Ratings are stress ratings only. Func tional operation above the Recommended Operating Conditions is not implied. Ex tended exposure to stresses above the R ecommended Operating Conditions may aff ect device reliability. 1. Device mount ed on a glass epoxy printed circuit boa rd 1.575 in x 1.575 in x 0.059 in; moun ting pad for the collector lead min. 0. 93 sq. in. http://onsemi.com PNP SILIC ON HIGH VOLTAGE TRANSISTOR SURFACE MOUN T COLLECTOR 2,4 BASE 1 EMITTER 3 MARK ING DIAGRAM TO--223 CASE 318E STYLE 1 1 AYW BT2G G A = Assembly Location Y = Year W = Work Week BT2 =Device Code G = Pb--Free Package (Note: Microdot ma y be in either location) ORDERING INFO RMATION Device Package Shipping† BSP16T1G TO--223 1000/Tape & Reel (Pb- -Free) †For information on tape and reel specifications, including part ori entation and tape sizes, please refer t o our Tape and Reel Packaging Specifica tions Brochure, BRD8011/D.  Semicon ductor Components Industries, LLC, 2010 September, 2010 -- Rev. 7 1 Publicat ion Order Number: BSP16T1/D BSP16T1G E LECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -- Emitte r Breakdown Voltage (IC = --50 mAdc, IB = 0, L = 25 mH) Collector -- Base Brea kdown Voltage (IC = --100 mAdc, IE = 0) Collector--Emitter








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