N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
BSS123
Preliminary
170mA, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC BSS123 is...
Description
UNISONIC TECHNOLOGIES CO., LTD
BSS123
Preliminary
170mA, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC BSS123 is an N-channel mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with low CRSS.
The UTC BSS123 is suitable for Automotive and Other Applications Requiring.
FEATURES
* RDS(on) ≤ 6.0Ω @ VGS=10V, ID=100mA * Low CRSS
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
BSS123L-AE3-R
BSS123G-AE3-R
SOT-23
Note: Pin Assignment: G: Gate S: Source D: Drain
Pin Assignment 123 GSD
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 3
QW-R209-133.b
BSS123
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation
Continuous Non-Repetitive Continuous (Note 1) Pulsed (Note 2) TA=25°C (Note 3) Derate above 25°C
VDSS VGSS VGSM
ID IDM
PD
100 V ±20 V ±40 Vpk 0.17 A 0.68 A 225 mW 1.8 mW/°C
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature Range
TSTG
-55~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER Junction to Ambient
SYMBOL θJA
RATINGS 556
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
UNIT °C/W
PARAMETER
...
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