BSS123

N-Channel 100V MOSFET Features: Surface-mounted package Halogen free Application DC-DC Portable appliance Power management BSS123 BVDSS= 100V , ΩRDS(ON)< 6 @VGS= 10V ID= 0.17A Absolute Maximum Ratings (TA=25℃Unless Otherwise Noted) Parameter Symbol Marking Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current(1) ℃Ta=25 Pulsed Drain Current(2) Power Dissipation(FR-5 board)(3) ℃Ta=25 Operating Junction and Storage Temperature Range VGS ID IDM PD TJ, Tstg BSS123 SA 100 ±20 0.17 0.68 225 -55 to150 Thermal Characteristics Symbol Characteristic RθJA ：Note Junction-to-Ambient (1) The Power dissipation of the package may result in a lower continuous drain current. ≦ ≦ ％(2) Pulse Width 300us, Duty Cycle 2.0 (3) FR-5= 1.0 X 0.75 X 0.062 in Max. 556 Unit V V A A mW ℃ Units ℃/W Rev.3, Mar-2014 Page 1 of 5 N-Channel 100V MOSFET BSS123 Electrical Characteristics (TA =25℃Unless Otherwise Specified) Symbol Parameter Test Condition Static BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250µA VGS(th) Gate Threshold Voltage VDS=VGS,ID=1mA IGSS Gate-Body Leakage VDS =0V,VGS=±20V IDSS Zero Gate Voltage Drain Current VDS =100V,VGS=0V RDS(ON) Drain-Source On-Resistance VGS=10V, ID=100mA VSD gFS Dynamic(4) Diode Forward On-voltage Forward Transconductance VGS=0V, ID=0.34A ID=100mA, VDS=25V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time td(off) Turn-Off Delay Time ：Note ％(4) Puls...