BSS123

BSS123 BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. These products have been designed to minimize onstate resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V High density cell design for extremely low RDS(ON) Rugged and Reliable Compact industry standard SOT-23 surface mount package DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1) PD Maximum Power Dissipation Derate Above 25°C (Note 1) TJ, TSTG TL Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size SA BSS123 7’’ GS Ratings 100 ±20 0.17 0.68 0.36 2.8 −55 to +150 300 350 Tape width 8mm Units V V A W mW/°C °C °C/W Quantity 3000 units ©2003 Semiconductor Components Industries,...