BSS123

SMD Power MOSFET Transistor (N-Channel) BSS123 SMD Power MOSFET Transistor (N-Channel) Features Low On-Resistance:6Ω Low input capacitance:20pF Low output capacitance:9pF Low threshole:2.8V Fast switching speed:20nS RoHS Compliance and Halogen Free Application DC to DC converter Cellular & PCMCIA card Cordless telephone Power management in portable and battery etc. SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VDSS VGSS ID IDM PD RthJA TJ, TSTG Description Marking Code Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed (Note 1) Drain Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient Storage Temperature Range BSS123 SA 100 ± 20 170 680 225 556 -55 to +150 TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Unit V V mA mA mW ° C/W °C Conditions TA=25° C TA=25° C Rev. B/AH Page 1 of 6 SMD Power MOSFET Transistor (N-Channel) Electrical Characteristics (T Ambient=25ºC unless noted otherwise) BSS123 Symbol V(BR)DSS VGS(th) IGSS Description Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) gFS Static Drain-to-Source On-Resistance Forward Transconductance Min. 100 0.8 8.0 Typ....