Document
Features
• High Dense Cell Design for Extremely Low RDS(ON) • Voltage Controlled Small Signal Switch • Surface Mount Package • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix "-HF" • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
BSS123
N-Channel MOSFET
Maximum Ratings
• Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature: -55°C to +150°C • Thermal Resistance: 357°C/W Junction to Ambient
Parameter Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous Power Dissipation
Symbol VDS VGS ID PD
Rating 100 ±20 0.17 0.35
Unit V V A W
Internal Structure
D
G S
1. *$7E 2. 6285&( 3. '5$,1
Marking:B123
SOT-23
A D
3
12 FE
CB
G K
HJ
L
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50
Suggested Solder Pad Layout
NOTE
0.031 0.800
0.035 0.900
0.079 2.000
inches mm
0.037 0.950
0.037 0.950
Rev.3-1-01012019
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MCCSEMI.COM
BSS123
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA
Gate-Threshold Voltage(Note1)
VGS(th) VDS=VGS, ID=250µA
Gate-Body Leakage Current Zero Gate Voltage Drain Current
IGSS IDSS
Drain-Source On-Resistance(Note1) RDS(on)
Forward Transconductance(Note1) Diode Forward Voltage(Note1)
Dynamic Characteristics(Note3)
gFS VSD
VGS=± 20V, VDS=0V VDS=100V, VGS=0V VDS=20V, VGS=0V VGS=10V, ID=0.17A VGS=4.5V, ID=0.17A
VDS=10V, ID=0.17A
VGS=0V, IS=0.34A
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Switching Characteristics
Ciss Coss Crss
VDS=25V,VGS=0V, f=1MHz
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS=10V,VGS=10V,ID=0.22A
Gate-Drain Charge
Qgd
Turn-On Delay Time(Note2,3)
td(on)
Turn-On Rise Time(Note2,3) Turn-Off Delay Time(Note2,3)
tr td(off)
VDD=30V,VGS=10V,RG=50Ω, ID=0.28A
Turn-Off Fall Time(Note2,3)
tf
Note: 1.Pulse Test : Pulse Width=300μs, Duty Cycle≤2%. 2.Switching Characteristics are Independent of Operating Junction Temperature. 3.Graranted by Design,Not Subject to Producting.
Min
100 1.0
80
Typ Max Unit
V 2.8 V ±50 nA 1 µA 10 nA 6Ω 10
mS 1.3 V
29 60 10 15 pF 26
1.4 0.15 0.2
2 0.25 0.4 8 8 13 16
nC ns
Rev.3-1-01012019
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MCCSEMI.COM
Curve Characteristics
Drain Current (mA)
450 400 350 300 250 200 150 100
50 0 0
Fig. 1 - Output Charact eristics
VGS=6V,5V,4V VGS=3V
TA=25°C Pulsed
VGS=2.5V
VGS=2V
1234 Drain To Source Voltage (V)
5
Fig. 3 - RDS(ON)—ID
6 TA=25°C Pulsed
5
Drain-Source On-Resistance (Ω)
4 VGS=4.5V
VGS=10V 3
2 50 100 150 200 250 300 350 Drain Current (mA)
Fig. 5 - IS—VSD
400 Pulsed
TA=100°C 100
Source Current (mA)
TA=25°C
10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source To Drain Voltage (V)
Rev.3-1-01012019
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Drain Current (mA)
Threshold Voltage (V)
Drain-Source On-Resistance (Ω)
BSS123
450 VDS= 3V
400 Pulesd 350
300
250
200
150
100
50
0 0
Fig. 2 - Transfer Characteristics
TA=100°C TA=25°C
12 3 Gate To Source Voltage (V)
4
30 25 20 15 10
5 0
0
2.0 1.8 1.6 1.4 1.2 1.0
25
Fig. 4 - RDS(ON)—VGS
Pulsed
ID=0.17A
TA=25°C
TA=100°C
2 4 68 Gate To Source Voltage (V)
Fig. 6 - Threshold Voltage
10
ID= 250μA
50 75 100 Junction Temperature (°C)
125
MCCSEMI.COM
Ordering Information
Device Part Number-TP Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-TP-HF
BSS123
Packing Tape&Reel:3Kpcs/Reel
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