ES1B

1.0 A Ultra Fast Recovery Rectifier ES1A-ES1D Features For Surface Mount Applications Glass Passivated Junction Low Profile Package Easy Pick and Place Built−in Strain Relief Superfast Recovery Times for High Efficiency This Device is Pb−Free and is RoHS Compliant Applications This Product is General Usage and Suitable for Many Different Applications DATA SHEET www.onsemi.com SMA CASE 403AE (COLOR BAND DENOTES CATHODE) MARKING DIAGRAM $Y&Z&3 ES1X $Y &Z &3 ES1X X = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Specific Device Code = A/B/C/D ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 1 May, 2022 − Rev. 5 Publication Order Number: ES1D/D ES1A−ES1D ABSOLUTE MAXIMUM RATINGS TA = 25°C Unless Otherwise Noted Value Symbol Parameter 1A 1B 1C 1D Units VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TA = 120°C Non−repetitive Peak Forward Surge Current 8.3 ms Single Half−Sine−Wave 50 100 150 200 V 1.0 A 30 A Tstg Storage Temperature Range −50 to +150 °C TJm Operating Junction Temperature −50 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter PD Power...