ES1G-T Datasheet (data sheet) PDF





ES1G-T Datasheet, Surface Mount Super Fast Rectifier

ES1G-T   ES1G-T  

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ES1D-T - ES1J-T Taiwan Semiconductor 1A , 200V - 600V Surface Mount Super Fast Rectifier FEATURES ● Glass passivate d junction chip ● Ideal for automated placement ● Super fast recovery time for high efficiency ● Compliant to R oHS Directive 2011/65/EU and in accorda nce to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIO NS ● Switching mode power supply (SMP S) ● Adapters ● Lighting applicatio n ● Converter KEY PARAMETERS PARAME TER VALUE UNIT IF(AV) VRRM IFSM TJ M AX Package 1A 200 - 600 V 30 A 150 °C DO-214AC (SMA) Configuration Si ngle Die MECHANICAL DATA ● Case: DO- 214AC (SMA) ● Molding compound meets UL 94V-0

ES1G-T Datasheet, Surface Mount Super Fast Rectifier

ES1G-T   ES1G-T  
flammability rating ● Moisture sensiti vity level: level 1, per J-STD-020 ● Packing code with suffix "G" means gree n compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A w hisker test ● Polarity: As marked ● Weight: 0.06 g (approximately) DO-214 AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAME TER SYMBOL ES1D-T ES1G-T Marking co de on the device ES1D ES1G Repetitiv e peak reverse voltage Reverse voltage, total rms value Maximum DC blocking vo ltage Forward current Surge peak forwar d current, 8.3 ms single half sine-wave superimposed on rated load per diode) VRRM VR(RMS) VDC IF(AV) IFSM 200 140 200 400 280 400 1 30 Junction tempera ture Storage temperature TJ TSTG - 55 to +150 - 55 to +150 ES1J-T ES1J 600 420 600 UNIT V V V A A °C °C 1 Vers ion:C1702 ES1D-T - ES1J-T Taiwan Semic onductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance Junction-to-lead thermal resistance S YMBOL RӨJA RӨJL LIMIT 85 35 UNIT ° C/W °C/W ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARA METER CONDITIONS SYMBOL Forward volta ge per diode (1) ES1D-T ES1G-T ES1J-T IF =1A, TJ=25°C VF Reverse current @ rated VR per diode (2) TJ = 25°C TJ =125°C IR ES1D-T Junction capa








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