DatasheetsPDF.com

ES1B Dataheets PDF



Part Number ES1B
Manufacturers SMC Diode
Logo SMC Diode
Description SURFACE MOUNT SUPER FAST RECTIFIER
Datasheet ES1B DatasheetES1B Datasheet (PDF)

Technical Data Data Sheet N0159, Rev. E ES1A-ES1M SURFACE MOUNT SUPER FAST RECTIFIER ES1A-ES1M SMA Features  Glass Passivated Die Construction  Ideally Suited for Automatic Assembly  Low Forward Overload Drop, High Efficiency  Low Power Loss  Super-Fast Recovery Time  Plastic Case Material has UL Flammability Classification Rating 94V-O  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request  Circuit Diagram Mechan.

  ES1B   ES1B



Document
Technical Data Data Sheet N0159, Rev. E ES1A-ES1M SURFACE MOUNT SUPER FAST RECTIFIER ES1A-ES1M SMA Features  Glass Passivated Die Construction  Ideally Suited for Automatic Assembly  Low Forward Overload Drop, High Efficiency  Low Power Loss  Super-Fast Recovery Time  Plastic Case Material has UL Flammability Classification Rating 94V-O  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request  Circuit Diagram Mechanical Data  Case: Low Profile Molded Plastic  Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026  Polarity: Cathode Band or Cathode Notch  Marking: Type Number  Weight: 0.06 grams(approx) Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J ES1K ES1M Units Peak Repetitive Reverse Voltage VRRM 50 RMS Reverse Voltage VR(RMS) 34 Average Rectified Output Current @TL =120°C Io Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on IFSM rated load (JEDEC Method) Forward voltage @IF =1.0A VF Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IR Typical junction capacitance (Note 1) CJ Reverse Recovery Time (Note 2) Trr Electro-Static Discharge ESD Typical thermal resistance (Note 3) Operating Junction and Storage Temperature Range RθJL TJ,TSTG 100 150 200 300 400 600 800 1000 V 70 105 140 210 280 420 560 700 1.0 A 30 A 0.95 1.3 1.7 5 50 45.0 35 2000 35 -55 to +150 V µA pF 75 ns V K/W °C Note: 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC 2. Measured with IF=0.5A, IR=1.0A, Irr=0.25A 3. Mounted on P.C. Board with 8.0mm2 lead area  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Technical Data Data Sheet N0159, Rev. E Ratings and Characteristics Curves ES1A-ES1M  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Technical Data Data Sheet N0159, Rev. E Mechanical Dimensions SMA ES1A-ES1M SYMBOL A B C D E F G H Millimeters Min. Max. 2.40 2.84 3.99 4.75 1.05 1.70 0.15 0.51 4.80 5.66 1.90 2.95 0.05 0.203 0.76 1.52 Inches Min. Max. 0.094 0.157 0.041 0.112 0.187 0.067 0.006 0.020 0.189 0.075 0.002 0.223 0.116 0.008 0.030 0.600 Ordering Information Device ES1A-ES1M Package SMA (Pb-Free) Shipping 5000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification. Carrier Tape Specification SMA Marking Diagram Where XXXXX is YYWWL ES = Device Type 1 = Forward Current (1A) A = Reverse Voltage (50V) YY = Year WW = Week L = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 SYMBOL A B C d E F P P0 P1 T W Millimeters Min. 2.97 5.70 2.32 1.40 1.40 5.60 3.90 3.90 1.90 0.25 Max. 3.17 5.90 2.52 1.60 1.60 5.70 4.10 4.10 2.10 0..


ES1A ES1B ES1C


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)