SWITCHING TRANSISTORS. 2N2222A Datasheet

2N2222A TRANSISTORS. Datasheet pdf. Equivalent

Part 2N2222A
Description NPN SILICON PLANAR SWITCHING TRANSISTORS
Feature TO - 18 NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2222A Switching And Linear Application DC And V.
Manufacture Rectron
Datasheet
Download 2N2222A Datasheet



2N2222A
TO - 18 NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2222A
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2222A
Collector -Emitter Voltage
VCEO
40
Collector -Base Voltage
VCBO
75
Emitter -Base Voltage
VEBO
6.0
Collector Current Continuous
IC
800
Power Dissipation @Ta=25 degC
PD
500
Derate Above 25deg C
2.28
@ Tc=25 degC
PD
1.2
Derate Above 25deg C
6.85
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
SYMBOL TEST CONDITION
VCEO
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=60V, IE=0
VALUE
MIN MAX
40 -
75 -
6.0 -
- 10
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Ta=150 deg C
VCB=60V, IE=0
- 10
ICEX
VCE=60V, VEB=3V
-
10
IEBO
VEB=3V, IC=0
- 10
IBL VCE=60V, VEB=3V
VCE(Sat)* IC=150mA,IB=15mA
-
-
20
0.3
IC=500mA,IB=50mA
1.0
VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2
IC=500mA,IB=50mA
-
2.0
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
UNIT
V
V
V
nA
uA
nA
nA
nA
V
V
V
V
REV C



2N2222A
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
DC Current Gain
hFE IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
2N2222A
>35
>50
>75
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
hfe
Input Impedance
hie
Voltage Feedback Ratio
hre
Out put Admittance
hoe
Collector Base Time Constant
rb'Cc
Real Part Common-Emitter High Frequency
Input Impedance
Noise Figure
Re(hie)
NF
Ta=55 deg C
IC=10mA,VCE=10V
IC=150mA,VCE=10V
IC=150mA,VCE=1V
IC=500mA,VCE=10V
ALL f=1kHz
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IE=20mA, VCB=20V
f=31.8MHz
IC=20mA, VCE=20V
f=300MHz
IC=100uA, VCE=10V
Rs=1kohms, f=1kHz
>35
100-300
>50
>40
50-300
75-375
2.0-8.0
0.25-1.25
<8.0
<4.0
5.0-35
25-200
<150
<60
- <4.0
DYNAMIC CHARACTERISTICS
Transistors Frequency
Out-Put Capacitance
Input Capacitance
ft IC=20mA, VCE=20V
f=100MHz
Cob VCB=10V, IE=0
f=100kHz
Cib VEB=0.5V, IC=0
f=100kHz
>300
<8.0
<25
SWITCHING Time
Delay time
Rise time
td IC=150mA,IB1=15mA
tr VCC=30V,VBE=0.5V -
<10
<25
Storage time
Fall time
ts IC=150mA, IB1=
tf IB2=15mA, VCC=30V -
<225
<60
*Pulse Condition: Pulse Width=300us, Duty Cycle=2%
UNIT
kohms
x10-4
umhos
ps
ohms
dB
MHz
pF
pF
ns
ns
ns
ns
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