2N2222A

TO - 18 NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2222A Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2222A Collector -Emitter Voltage VCEO 40 Collector -Base Voltage VCBO 75 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 500 Derate Above 25deg C 2.28 @ Tc=25 degC PD 1.2 Derate Above 25deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 75 6.0 - - 10 Emitter-Cut off Current Base-Cut off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Ta=150 deg C VCB=60V, IE=0 - 10 ICEX VCE=60V, VEB=3V - 10 IEBO VEB=3V, IC=0 - 10 IBL VCE=60V, VEB=3V VCE(Sat)* IC=150mA,IB=15mA - 20 0.3 IC=500mA,IB=50mA 1.0 VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2 IC=500mA,IB=50mA - 2.0 UNIT V V V mA mW mW/deg C W mW/deg C deg C UNIT V V V nA uA nA nA nA V V V V REV C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION DC Current Gain hFE IC=0.1mA,VCE=10V IC=1mA,VCE=10V IC=10mA,VCE=10V 2N2222A >35 >50 >75 DYNAMIC CHARACTERISTICS Small Si...