NPN Transistor. 2N2222A Datasheet

2N2222A Transistor. Datasheet pdf. Equivalent

Part 2N2222A
Description Silicon NPN Transistor
Feature Description SEMICOA Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JA.
Manufacture SEMICOA
Datasheet
Download 2N2222A Datasheet



2N2222A
Description
SEMICOA Corporation offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N2222AJ)
JANTX level (2N2222AJX)
JANTXV level (2N2222AJV)
JANS level (2N2222AJS)
JANSR level (2N2222AJSR)
2N2222A
Silicon NPN Transistor
Data Sheet
Applications
General purpose
Low power
NPN silicon transistor
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25OC
Derate linearly above 37.5OC
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ
TSTG
RθJA
Features
Hermetically sealed TO-18 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/255
Benefits
Qualification Levels: JAN, JANTX,
JANTXV, JANS and JANSR
Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
50 Volts
75 Volts
6 Volts
800 mA
0.5
3.08
-65 to +200
W
mW/°C
°C
-65 to +200
°C
325 °C/W
Copyright2010
Rev. N
SEMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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2N2222A
2N2222A
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Switching Characteristics
Saturated Turn-Off Time
Saturated Turn-On Time
Symbol
Test Conditions
Min Typ Max Units
V(BR)CEO IC = 10 mA
50
Volts
ICBO1 VCB = 75 Volts
10 µA
ICBO2 VCB = 60 Volts
10 nA
ICBO3 VCB = 60 Volts, TA = 150OC
10 µA
ICES VCE = 50 Volts
50 nA
IEBO1 VEB = 6 Volts
10 µA
IEBO2 VEB = 4 Volts
10 nA
Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%
Symbol
Test Conditions
Min Typ Max Units
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
VBEsat1
VBEsat2
VCEsat1
VCEsat2
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts,
TA = -55OC
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
50
75
100
100
30
35
0.6
325
300
1.2
2.0
Volts
0.3
1.0
Volts
Symbol
Test Conditions
Min Typ Max Units
|hFE|
VCE = 20 Volts, IC = 20 mA,
f = 100 MHz
hFE
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
2.5
50
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
8 pF
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
25 pF
toff 300 ns
ton 35 ns
Copyright2010
Rev. N
SEMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2





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