BAV70

Switching Diodes Silicon Epitaxial Planar BAV70 1. Applications Ultra-High-Speed Switching 2. Packaging and Internal Circuit BAV70 1: Anode 1 2: Anode 2 3: Cathode SOT23 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-repetitive peak forward surge current Power dissipation VRM VR IO IFM IFSM PD (Note 1) (Note 1) (Note 1), (Note 2) (Note 3) 100 100 215 500 2 150 320 V mA A mW Junction temperature Storage temperature Tj Tstg 150 -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit rating. Total rating = Unit rating × 1.5 Note 2: Measured with a 10 ms pulse. Note 3: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt, Cu pad: 0.42 mm2 × 3) ©2016 Toshiba Corporation 1 Start of commercial production 2016-08 2016-10-20 Rev.1.0 4. Electrical Ch...