MMBT3906

MMBT3906 Silicon PNP SMD triode 1˖base 2˖emitter 3˖collector encapsulation mode˖SOT-23 Classification of hFE˄1˅ Rank L H Range 100-200 200-300 Marking 2A Ouline example Maximum ratings(Ta=25ć unless otherwise noted) Parameter Symbol Value Collector-Base Breakdown Voltage VCBO -40 Collector-Emitter Breakdown Voltage VCEO -40 Emitter-Base Breakdown Voltage VEBO -6 Collector Current IC -200 Collector Power Dissipation PC 225 Junction Temperature TJ 150 Storage Temperature Tstg ̚ Unit V V V mA mW ć ć Electrical Characteristics (Ta=25ć unless otherwise noted) Parameter Symbol Test Condition Collector-Base Breakdown Voltage VCBO IC=-100uA IE=0 Collector-Emitter Breakdown Voltage VCEO IC=-1mA IB=0 Emitter-Base Breakdown Voltage VEBO IE=-100uA IC=0 Collector Cutoff Current ICBO VCB=-40V IE=0 Collector Cutoff Current ICEX VCB=-30V VEB(off) =-3V Emitter Cutoff Current IEBO VCE=-5V IB=0 HFE(1) VCE=-1V IC=-10mA DC Current Gain HFE(2) VCE=-1V IC=-50mA HFE(3) VCE=-1V IC=-100mA IC=-10mA IB=-1mA Collector-Emitter Saturation Voltage VCE(sat) IC=-50mA IB=-5mA Collector-Base Saturation Voltage IC=-10mA IB=-1mA VBE(sat) IC=-50mA IB=-5mA transition frequency fT VCE=-20V IC=-10mA f=100MHz Min -40 -40 -6 100 60 30 250 Max -100 -50 -100 300 300 Unit V V V nA nA nA -0.2 -0.2 -0.85 -0.95 V V V V MHz 2017-05/17 REV:O DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification...