BAS19

BAS19, BAS20, BAS21 Silicon Epitaxial Planar Diodes High Voltage Switching Diodes 3 Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current Total Device Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 12 Marking Code: HC TO-236 Plastic Package BAS19 BAS20 BAS21 at t = 1 s at t = 1 μs Symbol VR IF(AV) IFRM IFSM Ptot RθJA Tj, Tstg Value 120 200 250 200 625 0.5 2.5 350 357 - 55 to + 150 Unit V mA mA A mW OC/W OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 200 mA Reverse Breakdown Voltage at IR = 100 µA at IR = 100 µA at IR = 100 µA Reverse Current at VR = 100 V at VR = 150 V at VR = 200 V at VR = 100 V, Tj = 150 OC at VR = 150 V, Tj = 150 OC at VR = 200 V, Tj = 150 OC Total Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 Ω Symbol VF BAS19 BAS20 BAS21 V(BR) BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 IR Ctot trr Min. - 120 200 250 - - - Max. 1 1.25 - 0.1 0.1 0.1 100 100 100 5 50 Unit V V V V V µA µA µA µA µA µA pF ns SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 BAS19, BAS20, BAS21 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 ...