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BAS20 Datasheet, Equivalent, Planar Diodes.Silicon Epitaxial Planar Diodes Silicon Epitaxial Planar Diodes |
| Part | BAS20 |
|---|---|
| Description | Silicon Epitaxial Planar Diodes |
| Feature | BAS19, BAS20, BAS21
Silicon Epitaxial Pl anar Diodes
High Voltage Switching Diod es
3
Absolute Maximum Ratings (Ta = 2 5 OC) Parameter
Reverse Voltage
Continu ous Forward Current Repetitive Peak For ward Current Non-repetitive Peak Forwar d Surge Current
Total Device Dissipatio n Thermal Resistance Junction to Ambien t Junction and Storage Temperature Rang e
12
Marking Code: HC TO-236 Plastic Package
BAS19 BAS20 BAS21
at t = 1 s a t t = 1 μs
Symbol
VR
IF(AV) IFRM IFSM Ptot RθJA Tj, Tstg
Value
120 200 250 200
625
0. 5 2. 5 350 357 - 55 to + 150 Unit V mA mA A mW OC/W OC Characteris tics at Ta = 25 . |
| Manufacture | SEMTECH |
| Datasheet |
| Part | BAS20 |
|---|---|
| Description | Silicon Epitaxial Planar Diodes |
| Feature | BAS19, BAS20, BAS21
Silicon Epitaxial Pl anar Diodes
High Voltage Switching Diod es
3
Absolute Maximum Ratings (Ta = 2 5 OC) Parameter
Reverse Voltage
Continu ous Forward Current Repetitive Peak For ward Current Non-repetitive Peak Forwar d Surge Current
Total Device Dissipatio n Thermal Resistance Junction to Ambien t Junction and Storage Temperature Rang e
12
Marking Code: HC TO-236 Plastic Package
BAS19 BAS20 BAS21
at t = 1 s a t t = 1 μs
Symbol
VR
IF(AV) IFRM IFSM Ptot RθJA Tj, Tstg
Value
120 200 250 200
625
0. 5 2. 5 350 357 - 55 to + 150 Unit V mA mA A mW OC/W OC Characteris tics at Ta = 25 . |
| Manufacture | SEMTECH |
| Datasheet |
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