S-MMBT2907ALT1

 General Purpose Transistor PNP Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MMBT2907LT1 MMBT2907ALT1 S-MMBT2907LT1 S-MMBT2907ALT1 MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value 2907 2907A –40 –60 –60 –5.0 –600 Unit Vdc Vdc Vdc mAdc 3 1 2 SOT–23 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C DEVICE MARKING MMBT2907LT1 = M2B, MMBT2907AL T1 = 2F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = –10 mAdc, I B = 0) MMBT2907 MMBT2907A Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0) Collector Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc) Collector Cutoff Current ( V CB = –50Vdc, I E = 0) MMBT2907 MMBT2907A V (BR)CEO V (BR)CBO V (B...