Document
PB64 • PB64A
Dual Power Booster Amplifier
RoHS
COMPLIANT
FEATURES
• Wide Supply Range – ±20 V to ±75 V • High Output Current – Up to 2 A Continuous • Programmable Gain • High Slew Rate – 800 V/µs Typical • Programmable Output Current Limit • High Power Bandwidth – 1 MHz • Low Quiescent Current – 20 mA Typical (Total, Both Channels)
PB64DP
APPLICATIONS
• LED Test Equipment • LCD Test Equipment • Semiconductor Test Equipment • High Voltage Instrumentation • Electrostatic Transducers and Deflection • Piezoelectric Positioning and Actuation • Programmable Power Supplies
DESCRIPTION
The PB64 is a dual high voltage, high current booster amplifier designed to provide voltage and current gain for a small signal, general purpose op amp. Including the power booster within the feedback loop of the driver amplifier results in a composite amplifier with the accuracy of the driver and the extended output cur‐ rent capability of the booster.
The output stage utilizes complementary MOSFETs, providing symmetrical output impedance and elimi‐ nating second breakdown limitations imposed by Bipolar Junction Transistors. Although the booster can be configured quite simply, enormous flexibility is provided through the choice of driver amplifier, current limit and supply voltage.
This hybrid circuit utilizes a Beryllia (BeO) substrate, thick film resistors, ceramic capacitors and semicon‐ ductor chips to maximize reliability, minimize size and give top performance. Ultrasonically bonded alumi‐ num wires provide reliable interconnections at all operating temperatures. The PB64 is packaged in Apex Microtechnology’s 12‐pin power SIP. The case is electrically isolated.
www.apexanalog.com
© Apex Microtechnology Inc. All rights reserved
Sep 2016 PB64U Rev A
PB64 • PB64A
TYPICAL CONNECTION
RI VIN
Figure 1: Typical Connection
RF +VS
+15V 100nF
Op Amp
100nF -15V
100nF 20μF
IN +VS
½PB64
CL CC
GAIN
GND -VS
CC
RGAIN
RCL
20μF 100nF -VS
VOUT RL
2 PB64U Rev A
PINOUT AND DESCRIPTION TABLE
Figure 2: External Connections
PB64 • PB64A
Pin Number
1 2 3
4
5 6 7 8
9
10 11 12
Name
IN_A CC_A OUT_A
GAIN_A
CL_A +Vs ‐Vs CL_B
GAIN_B
OUT_B CC_B IN_B
Description
The input for channel A.
Compensation capacitor connection for channel A. Select value based on Phase Compensation. See applicable section.
The output for channel A. Connect this pin to load and to the feedback resistors.
Gain resistor pin for channel A. Connect RGAIN_A between GAIN_A and ground. This will specify the gain for the power booster itself, not the composite amplifier. See
applicable section.
Connect to the current limit resistor. Output current flows into/out of these pins through RCL. The output pin and the load are connected to the other side of RCL.
The positive supply rail for both channels.
The negative supply rail for both channels.
Connect to the current limit resistor. Output current flows into/out of these pins through RCL. The output pin and the load are connected to the other side of RCL.
Gain resistor pin for channel B. Connect RGAIN_B between GAIN_B and ground. This will specify the gain for the power booster itself, not the composite amplifier. See
applicable section.
The output for channel B. Connect this pin to load and to the feedback resistors.
Compensation capacitor connection for channel B. Select value based on Phase Compensation. See applicable section.
The input for channel B.
PB64U Rev A
3
PB64 • PB64A
SPECIFICATIONS (PER AMPLIFIER)
All Min/Max characteristics and specifications are guaranteed over the Specified Operating Conditions. Typical performance characteristics and specifications are derived from measurements taken at typical sup‐ ply voltages and TC = 25°C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max Units
Supply Voltage, total Output Current, peak, per channel within SOA Power Dissipation, internal DC 1 Input Voltage, referred to common Temperature, pin solder, 10s max. Temperature, junction 2 Temperature Range, storage Operating Temperature Range, case
+Vs to ‐Vs IO PD VIN
TJ
TC
200 2 90
(‐VS + 10V) / AV (+VS ‐ 10V) / AV 260 150
‐55 +125 ‐25 +85
V A W V °C °C °C °C
1. Each device in the package is capable of dissipating 45W internally. 2. Long term operation at the maximum junction temperature will result in reduced product life. Derate power dissipation
to achieve high MTTF.
CAUTION INPUT
The PB64 is constructed from MOSFET transistors. ESD handling procedures must be observed. The exposed substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to temperatures in excess of 850°C to avoid generating toxic fumes.
Parameter
Offset Voltage, initial Offset Voltage vs. Temperature Input Bias Current Input Resistance, DC Input Capacitance Noise DC Power Supply Rejection DC Common Mode Rejection
Test Conditions
PB64
PB64A
Min Typ Max Min Typ Max
‐20 ±5 +20 ‐1.