MOSFETs Silicon N-Channel MOS (DTMOS)
TK560P60Y
TK560P60Y
1. Applications
• Switching Voltage Regulators
2. Features
...
MOSFETs Silicon N-Channel MOS (DTMOS)
TK560P60Y
TK560P60Y
1. Applications
Switching Voltage
Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.43 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.24 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
DPAK
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 600 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Tc = 25 )
(Note 1)
ID
7A
Drain current (DC)
(Tc = 100 )
(Note 1)
ID
4.4 A
Drain current (pulsed)
(Tc = 25 )
(Note 1)
IDP
28 A
Power dissipation
(Tc = 25 )
PD 60 W
Single-pulse avalanche energy
(Note 2)
EAS
64 mJ
Single-pulse avalanche current
IAS 1.8 A
Reverse drain current (DC)
(Note 1)
IDR
7
Reverse drain current (pulsed)
(Note 1)
IDRP
28 A
Channel temperature
Tch 150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handl...