Document
MOSFETs Silicon N-Channel MOS (DTMOS)
TK380P60Y
TK380P60Y
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
DPAK
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 600 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Tc = 25 )
(Note 1)
ID
9.7 A
Drain current (DC)
(Tc = 100 )
(Note 1)
ID
6.1 A
Drain current (pulsed)
(Tc = 25 )
(Note 1)
IDP
38.8 A
Power dissipation
(Tc = 25 )
PD 80 W
Single-pulse avalanche energy
(Note 2)
EAS
104 mJ
Single-pulse avalanche current
IAS 2.5 A
Reverse drain current (DC)
(Note 1)
IDR
9.7
Reverse drain current (pulsed)
(Note 1)
IDRP
38.8 A
Channel temperature
Tch 150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
©2016 Toshiba Corporation
1
Start of commercial production
2016-12
2016-11-15 Rev.1.0
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: VDD = 90 V, Tch = 25 (initial), L = 29.2 mH, RG = 25 Ω, IAS = 2.5 A
TK380P60Y
Symbol
Rth(ch-c) Rth(ch-a)
Max Unit
1.56 /W 125
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2016 Toshiba Corporation
2
2016-11-15 Rev.1.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance
Symbol
Test Condition
IGSS IDSS V(BR)DSS Vth RDS(ON)
VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.36 mA VGS = 10 V, ID = 4.9 A
Min
600 3
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness
Symbol
Ciss Crss Coss Co(er) rg
tr ton tf toff dv/dt
Test Condition VDS = 300 V, VGS = 0 V, f = 100 kHz
VDS = 0 to 400 V, VGS = 0 V VDS = OPEN , f = 1 MHz See Figure 6.2.1
VDS ≤ V(BR)DSS, ID ≤ 4.9 A
Min
50
TK380P60Y
Typ. Max Unit
±1 10 4 0.29 0.38
µA V Ω
Typ. Max Unit
590
pF
2.5
23
41
32 Ω
23 ns
60
8.2
150
V/ns
VDD ≈ 400 V VGS = 10 V/0 V ID = 4.9 A RL = 81 Ω RG = 10 Ω Duty ≤ 1 %, tw = 10 µs
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge
Symbol Qg
Test Condition VDD ≈ 400 V, VGS = 10 V, ID = 9.7 A
Qgs1 Qgd
Min Typ. Max Unit 20 nC
3.2 10.5
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Diode dv/dt ruggedness
Symbol
VDSF trr Qrr Irr
dv/dt
Test Condition
IDR = 9.7 A, VGS = 0 V VDD ≈ 400 V IDR = 4.6 A, VGS = 0 V -dIDR/dt = 100 A/µs
VDS ≤ 400 V, IDR ≤ 4.6 A, VGS = 0 V
Min Typ. Max Unit
-1.7 V
240
ns
2 µC
17.5
A
15 V/ns
©2016 Toshiba Corporation
3
2016-11-15 Rev.1.0
7. Marking
Fig. 7.1 Marking
TK380P60Y
©2016 Toshiba Corporation
4
2016-11-15 Rev.1.0
8. Characteristics Curves (Note)
TK380P60Y
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 VDSS - Ta
Fig. 8.6 RDS(ON) - ID
©2016 Toshiba Corporation
5
2016-11-15 Rev.1.0
TK380P60Y
Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 C - VDS
Fig. 8.10 Eoss - VDS
Fig. 8.11 Vth - Ta
Fig. 8.12 Dynamic Input/Output Characteristics
©2016 Toshiba Corporation
6
2016-11-15 Rev.1.0
TK380P60Y
Fig. 8.13 rth - tw (Guaranteed.