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TK380P60Y Dataheets PDF



Part Number TK380P60Y
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOSFET
Datasheet TK380P60Y DatasheetTK380P60Y Datasheet (PDF)

MOSFETs Silicon N-Channel MOS (DTMOS) TK380P60Y TK380P60Y 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Un.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK380P60Y TK380P60Y 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Tc = 25 ) (Note 1) ID 9.7 A Drain current (DC) (Tc = 100 ) (Note 1) ID 6.1 A Drain current (pulsed) (Tc = 25 ) (Note 1) IDP 38.8 A Power dissipation (Tc = 25 ) PD 80 W Single-pulse avalanche energy (Note 2) EAS 104 mJ Single-pulse avalanche current IAS 2.5 A Reverse drain current (DC) (Note 1) IDR 9.7 Reverse drain current (pulsed) (Note 1) IDRP 38.8 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ©2016 Toshiba Corporation 1 Start of commercial production 2016-12 2016-11-15 Rev.1.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: VDD = 90 V, Tch = 25  (initial), L = 29.2 mH, RG = 25 Ω, IAS = 2.5 A TK380P60Y Symbol Rth(ch-c) Rth(ch-a) Max Unit 1.56 /W 125 Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2016 Toshiba Corporation 2 2016-11-15 Rev.1.0 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25  unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol Test Condition IGSS IDSS V(BR)DSS Vth RDS(ON) VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 0.36 mA VGS = 10 V, ID = 4.9 A Min   600 3  6.2. Dynamic Characteristics (Ta = 25  unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness Symbol Ciss Crss Coss Co(er) rg tr ton tf toff dv/dt Test Condition VDS = 300 V, VGS = 0 V, f = 100 kHz VDS = 0 to 400 V, VGS = 0 V VDS = OPEN , f = 1 MHz See Figure 6.2.1 VDS ≤ V(BR)DSS, ID ≤ 4.9 A Min          50 TK380P60Y Typ. Max Unit  ±1  10  4 0.29 0.38 µA V Ω Typ. Max Unit 590  pF 2.5  23  41  32  Ω 23  ns 60  8.2  150    V/ns VDD ≈ 400 V VGS = 10 V/0 V ID = 4.9 A RL = 81 Ω RG = 10 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25  unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Qg Test Condition VDD ≈ 400 V, VGS = 10 V, ID = 9.7 A Qgs1 Qgd Min Typ. Max Unit  20  nC  3.2   10.5  6.4. Source-Drain Characteristics (Ta = 25  unless otherwise specified) Characteristics Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Diode dv/dt ruggedness Symbol VDSF trr Qrr Irr dv/dt Test Condition IDR = 9.7 A, VGS = 0 V VDD ≈ 400 V IDR = 4.6 A, VGS = 0 V -dIDR/dt = 100 A/µs VDS ≤ 400 V, IDR ≤ 4.6 A, VGS = 0 V Min Typ. Max Unit   -1.7 V  240  ns  2  µC  17.5  A 15   V/ns ©2016 Toshiba Corporation 3 2016-11-15 Rev.1.0 7. Marking Fig. 7.1 Marking TK380P60Y ©2016 Toshiba Corporation 4 2016-11-15 Rev.1.0 8. Characteristics Curves (Note) TK380P60Y Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 VDSS - Ta Fig. 8.6 RDS(ON) - ID ©2016 Toshiba Corporation 5 2016-11-15 Rev.1.0 TK380P60Y Fig. 8.7 RDS(ON) - Ta Fig. 8.8 IDR - VDS Fig. 8.9 C - VDS Fig. 8.10 Eoss - VDS Fig. 8.11 Vth - Ta Fig. 8.12 Dynamic Input/Output Characteristics ©2016 Toshiba Corporation 6 2016-11-15 Rev.1.0 TK380P60Y Fig. 8.13 rth - tw (Guaranteed.


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