TK290P65Y Datasheet (PDF)





TK290P65Y Datasheet - Silicon N-Channel MOSFET

TK290P65Y   TK290P65Y  

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MOSFETs Silicon N-Channel MOS (DTMOS) TK290P65Y TK290P65Y 1. Applications • Switching Voltage Regulators 2. Fea tures (1) Low drain-source on-resistanc e: RDS(ON) = 0.23 Ω (typ.) by using S uper Junction Structure : DTMOS (2) Eas y to control Gate switching (3) Enhance ment mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Sour

TK290P65Y Datasheet - Silicon N-Channel MOSFET

TK290P65Y   TK290P65Y  
ce DPAK 4. Absolute Maximum Ratings (N ote) (Ta = 25  unless otherwise spec ified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Dra in current (DC) (Tc = 25 ) (Note 1 ) ID 11.5 A Drain current (DC) (Tc = 100 ) (Note 1) ID 7.3 A Drain current (pulsed) (Tc = 25 ) (Note 1) IDP 46 A Power dissipation (Tc








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