V40PWM45C Datasheet (data sheet) PDF





V40PWM45C Datasheet, High Current Density Surface-Mount TMBS Rectifier

V40PWM45C   V40PWM45C  

Search Keywords: V40PWM45C, datasheet, pdf, Vishay, High, Current, Density, Surface-Mount, TMBS, Rectifier, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

www.vishay.com V40PWM45C Vishay General Semiconductor High Current Density Su rface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 A eSMP® Series K 1 2 SlimDPAK (TO-252AE) PIN 1 K PIN 2 H EATSINK DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ide al for automated placement • Low forw ard voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pea k of 260 °C • AEC-Q101 qualified ava ilable - Automotive ordering code: b ase P/NHM3 • Material categorization: for de

V40PWM45C Datasheet, High Current Density Surface-Mount TMBS Rectifier

V40PWM45C   V40PWM45C  
finitions of compliance please see www.v ishay.com/doc?99912 TYPICAL APPLICATION S For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM I FSM VF at IF = 20 A (TA = 125 °C) TJ m ax. Package 40 A 45 V 240 A 0.52 V 175 °C SlimDPAK (TO-252AE) Circuit confi guration Common cathode MECHANICAL DA TA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, R oHS-compliant Base P/NHM3 - halogen- free, RoHS-compliant, and AEC-Q101 qual ified Terminals: matte tin plated leads , solderable per J-STD-002 and JESD 22- B102 M3 and HM3 suffix meets JESD 20 1 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40PWM45C Device ma rking code V40PWM45C Maximum repetiti ve peak reverse voltage Maximum average forward rectified current (fig. 1) pe r device per diode VRRM IF(AV) (1) 45 40 20 Peak forward surge current 8.3 ms single half sine-wave superimpose d on rated load per diode Operating jun ction temperature range Storage tempera ture range IFSM TJ (2) TSTG 240 -40 t o +175 -55 to +175 Notes (1) With infi nite heatsink (2) The heat generated mu st be less than the thermal conductivity from junction to ambien








@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)