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V20PW10 Dataheets PDF



Part Number V20PW10
Manufacturers Vishay
Logo Vishay
Description Trench MOS Barrier Schottky Rectifier
Datasheet V20PW10 DatasheetV20PW10 Datasheet (PDF)

www.vishay.com V20PW10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF = 5 A eSMP® Series K 1 2 SlimDPAK (TO-252AE) PIN 1 PIN 2 K HEATSINK FEATURES • Very low profile - typical height of 1.3 mm Available • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak .

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www.vishay.com V20PW10 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF = 5 A eSMP® Series K 1 2 SlimDPAK (TO-252AE) PIN 1 PIN 2 K HEATSINK FEATURES • Very low profile - typical height of 1.3 mm Available • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 100 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max. 200 A 0.69 V 150 °C Package SlimDPAK (TO-252AE) Circuit configuration Single MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20PW10 Device marking code V20PW10 Maximum repetitive peak reverse voltage VRRM 100 Maximum average forward rectified current (Fig. 1) IF(AV) (1) 20 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 Operating junction temperature range Storage temperature range TJ (2) TSTG -40 to +150 -55 to +150 Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA UNIT V A A °C °C Revision: 11-May-2020 1 Document Number: 87678 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V20PW10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Maximum Instantaneous forward voltage Reverse current Typical junction capacitance IF = 5.0 A IF = 10 A IF = 20 A IF = 5.0 A IF = 10 A IF = 20 A VR = 70 V VR = 100 V 4.0 V, 1 MHz TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VF (1) IR (2) CJ Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms TYP. 0.50 0.60 0.78 0.43 0.55 0.69 0.02 8 16 1510 MAX. - 0.86 - 0.77 - 0.5 35 - UNIT V mA pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL .


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