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V20PW10
Vishay General Semiconductor
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
eSMP® Series
K
1
2 SlimDPAK (TO-252AE)
PIN 1 PIN 2
K HEATSINK
FEATURES
• Very low profile - typical height of 1.3 mm
Available
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
100 V
IFSM VF at IF = 20 A (TA = 125 °C)
TJ max.
200 A 0.69 V 150 °C
Package
SlimDPAK (TO-252AE)
Circuit configuration
Single
MECHANICAL DATA
Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20PW10
Device marking code
V20PW10
Maximum repetitive peak reverse voltage
VRRM
100
Maximum average forward rectified current (Fig. 1)
IF(AV) (1)
20
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM
200
Operating junction temperature range Storage temperature range
TJ (2) TSTG
-40 to +150 -55 to +150
Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA
UNIT
V A A °C °C
Revision: 11-May-2020
1
Document Number: 87678
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V20PW10
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum Instantaneous forward voltage
Reverse current Typical junction capacitance
IF = 5.0 A IF = 10 A IF = 20 A IF = 5.0 A IF = 10 A IF = 20 A
VR = 70 V
VR = 100 V
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C
VF (1)
IR (2) CJ
Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms
TYP. 0.50 0.60 0.78 0.43 0.55 0.69 0.02
8 16 1510
MAX. -
0.86 -
0.77 -
0.5 35 -
UNIT V
mA pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
.