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V20PW12C

Vishay

High Current Density Surface-Mount TMBS Rectifier

www.vishay.com V20PW12C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Scho...


Vishay

V20PW12C

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Description
www.vishay.com V20PW12C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.56 V at IF = 5 A eSMP® Series 1 2 SlimDPAK (TO-252AE) PIN 1 PIN 2 K HEATSINK K FEATURES Very low profile - typical height of 1.3 mm Trench MOS Schottky technology Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 120 V IFSM 150 A VF at IF = 10 A (TA = 125 °C) 0.66 V TJ max. 150 °C Package SlimDPAK (TO-252AE) Circuit configuration Common cathode MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20PW12C Device marking code V20P...




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