DatasheetsPDF.com

CAB450M12XM3 Dataheets PDF



Part Number CAB450M12XM3
Manufacturers CREE
Logo CREE
Description Half-Bridge Module
Datasheet CAB450M12XM3 DatasheetCAB450M12XM3 Datasheet (PDF)

VDS 1200 V CAB450M12XM3 IDS 450 A 1200V, 450A All-Silicon Carbide 5432 Conduction Optimized, Half-Bridge Module Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate Applications • Motor & Traction Drives • Vehicle Fast Chargers • Uninterruptable Power Supplies • Smart-Grid / G.

  CAB450M12XM3   CAB450M12XM3



Document
VDS 1200 V CAB450M12XM3 IDS 450 A 1200V, 450A All-Silicon Carbide 5432 Conduction Optimized, Half-Bridge Module Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate Applications • Motor & Traction Drives • Vehicle Fast Chargers • Uninterruptable Power Supplies • Smart-Grid / Grid-Tied Distributed Generation System Benefits Pa ckage 80 x 53 x 19 mm D V+ G1 C K1 G2 K2 B V+ Mid NTC2 NTC NTC1 V- • Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design. • Isolated integrated temperature sensing enables high-level temperature protection. • Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrentTiptlerotection. A Key Parameters (TC = 25˚C unless otherwise specified) Symbol Parameter VDS max VGS max VGS op Drain-Source Voltage Gate-Source Voltage, Maximum Value Gate-Source Voltage, Recommended Op. Value Min. -4 -4 IDS DC Continuous Drain Current ISD DC Source-Drain Current ISD BD DC Source-Drain Current (Body Diode) IDS (pulsed) Maximum Pulsed Drain-Source Current ISD (pulsed) Maximum Pulsed Source-Drain Current Maximum Virtual Junction TVJ op Temperature under Switching Conditions -40 Typ. Max. 1200 +19 +15 5 Unit Size Document Number Custom<Doc> Date: 4 Thursday, April 11, 2019 3 Test Conditions Note Sheet 2 V AC frequency ≥ 1Hz. Static Note 1 450 409 450 225 900 900 VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20 VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C Note 2 A VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C VGS = - 4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C tPmax limited by Tjmax VGS = 15 V, TC = 25 ˚C 175 °C Note 1 If MOSFET body diode is not used, VGS max = -8/+19 V Note 2 Assumes RTH JC = 0.11°C/W and RDS(on) = 4.6 mΩ. Calculate PD = (TVJ – TC) / RTH JC. Calculate ID_MAX = √(PD / RDS(on)) Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo 1 are registered trademarks of Cree, Inc. MOSFET Characteristics (Per Position) (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage 1200 1.8 2.5 3.6 2.0 VGS = 0 V, ID = 200 μA V VDS = VGS, ID = 132 mA VDS = VGS, ID = 132 mA, TJ = 175 °C IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current 5 200 0.05 1.3 VGS = 0 V, VDS = 1200 V μA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance (Devices Only) 2.6 3.7 VGS = 15 V, ID = 450 A mΩ 4.6 VGS = 15 V, ID = 450 A, TJ = 175 °C gfs Transconductance 355 VDS= 20 V, IDS= 450 A S 360 VDS= 20 V, IDS= 45. </div> </center> <br><br> <table width='100%' cellpadding='2' cellspacing='0' class='searchcenter0' bordercolor='#C0C0C0' Style='margin: auto; border-radius: 20px;'><tr><td> <td align='center'><a href='/product/1389832/Diodes/AL8861Q/index.html'>AL8861Q</a></td> <td align='center'><a href='/datasheet/CAB450M12XM3.html'>CAB450M12XM3</a></td> <td align='center'><a href='/product/1389835/Littelfuse/nanoSMD350LR-C/index.html'>nanoSMD350LR-C</a></td> </td></tr></table> <br><br> <table width='100%' cellspacing='1' cellpadding='5' height='20' style='border: solid #C4C4C4 1px; box-shadow:0 4px 10px 0 rgba(0,0,0,0.2),0 4px 20px 0 rgba(0,0,0,0.19)'> <tr><td class='searchcenter0' class='tb_list'> @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. <br> (<strong><a style='color: #000000' href='/privacy.html'>Privacy Policy & Contact</a></strong>)</td></tr></table> </body> </html>