Document
VDS 1200 V
CAB450M12XM3
IDS
450 A
1200V, 450A All-Silicon Carbide
5432
Conduction Optimized, Half-Bridge Module
Technical Features • High Power Density Footprint • High Junction Temperature (175 °C) Operation • Low Inductance (6.7 nH) Design • Implements Conduction Optimized Third Generation SiC MOSFET Technology • Silicon Nitride Insulator and Copper Baseplate
Applications • Motor & Traction Drives • Vehicle Fast Chargers • Uninterruptable Power Supplies • Smart-Grid / Grid-Tied Distributed Generation
System Benefits
Pa ckage 80 x 53 x 19 mm D
V+ G1 C K1
G2 K2
B
V+
Mid NTC2
NTC NTC1
V-
• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
• Isolated integrated temperature sensing enables high-level temperature protection. • Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrentTiptlerotection.
A
Key Parameters (TC = 25˚C unless otherwise specified)
Symbol Parameter
VDS max VGS max
VGS op
Drain-Source Voltage Gate-Source Voltage, Maximum Value Gate-Source Voltage, Recommended Op. Value
Min.
-4 -4
IDS DC Continuous Drain Current
ISD DC Source-Drain Current ISD BD DC Source-Drain Current (Body Diode) IDS (pulsed) Maximum Pulsed Drain-Source Current ISD (pulsed) Maximum Pulsed Source-Drain Current
Maximum Virtual Junction TVJ op Temperature under Switching
Conditions
-40
Typ.
Max.
1200 +19
+15
5
Unit
Size Document Number Custom
Date:
4
Thursday, April 11, 2019
3
Test Conditions
Note
Sheet
2
V AC frequency ≥ 1Hz. Static
Note 1
450 409
450 225
900 900
VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20
VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C Note 2
A
VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C VGS = - 4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C
tPmax limited by Tjmax VGS = 15 V, TC = 25 ˚C
175 °C
Note 1 If MOSFET body diode is not used, VGS max = -8/+19 V Note 2 Assumes RTH JC = 0.11°C/W and RDS(on) = 4.6 mΩ. Calculate PD = (TVJ – TC) / RTH JC. Calculate ID_MAX = √(PD / RDS(on))
Rev. A, 2019-06-01
CAB450M12XM3
4600 Silicon Dr., Durham, NC 27703
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
1 are registered trademarks of Cree, Inc.
MOSFET Characteristics (Per Position) (TC = 25˚C unless otherwise specified)
Symbol Parameter
Min. Typ. Max. Unit
Test Conditions
V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage
1200 1.8 2.5 3.6
2.0
VGS = 0 V, ID = 200 μA V VDS = VGS, ID = 132 mA
VDS = VGS, ID = 132 mA, TJ = 175 °C
IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current
5 200 0.05 1.3
VGS = 0 V, VDS = 1200 V μA
VGS = 15 V, VDS = 0 V
RDS(on)
Drain-Source On-State Resistance (Devices Only)
2.6 3.7
VGS = 15 V, ID = 450 A
mΩ
4.6 VGS = 15 V, ID = 450 A, TJ = 175 °C
gfs Transconductance
355 VDS= 20 V, IDS= 450 A S
360 VDS= 20 V, IDS= 45.