STL10N60M6

STL10N60M6 Datasheet N-channel 600 V, 550 mΩ typ., 5.5 A, MDmesh™ M6 Power MOSFET in a PowerFLAT™ 5x6 HV package 1 2 3 4 PowerFLAT™ 5x6 HV D(5, 6, 7, 8) Features Order code VDS RDS(on) max. STL10N60M6 600 V 660 mΩ Reduced switching losses Lower RDS(on) per area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected ID 5.5 A PTOT 48 W Applications Switching applications G(4) LLC converters Boost PFC converters S(1, 2, 3) AM15540v7 Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STL10N60M6 Product summary Order code STL10N60M6 Marking 10N60M6 Package PowerFLAT™ 5x6 HV Packing Tape and reel DS12876 - Rev 1 - December 2018 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID Drain current (continuous) at Tcase = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at Tcase = 25 °C IAR(2) Avalanche cu...