STL13N60M6

STL13N60M6 Datasheet N-channel 600 V, 330 mΩ typ., 7 A, MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package 1 2 3 4 PowerFLAT 5x6 HV D(5, 6, 7, 8) Features Order code VDS RDS(on) max. STL13N60M6 600 V 415 mΩ Reduced switching losses Lower RDS(on) per area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected ID 7A PTOT 52 W Applications Switching applications G(4) LLC converters Boost PFC converters S(1, 2, 3) AM15540v7 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STL13N60M6 Product summary Order code STL13N60M6 Marking 13N60M6 Package PowerFLAT™ 5x6 HV Packing Tape and reel DS12870 - Rev 2 - May 2019 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID Drain current (continuous) at Tcase = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at Tcase = 25 °C IAR(2) Avalanche current, repetit...