MBR2530

MBR2520 MBR2530 MBR2540 ® MOTOROLA HOT CARRIER POWER RECTIFIER · .. employing the Schottky Barrier principle in a large area metal·to· silicon power diode. State of the art geometry features epitaxial con· struction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low·voltage, high·frequency inverters, free wheeling diodes, and polarity protection diodes. Extremely Low vF Low Power Loss/High Low Stored Charge, Majority Efficiency Carrier Conduction High Surge Capacity SCHOTTKY BARRIER RECTIFIERS 25 AMPERE 20,30,40 VOLTS MAXIMUM RATINGS Rating Symbol MBR2520 MBR2530 MBR2540 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM 20 30 40 Volts VR Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 Volts Average Rectified Forward Current 10 25 I Amp VR(equiv.) ';;0.2 VR(dc), TC = 80°C Ambient Temperature TA vc Rated VR(dc),PF(AV) =0 90 85 80 ROJA = 3.50 CIW Non-Repetitive Peak Surge Current (surge applied at rated load conditions. halfwave, single phase. 60 Hz) IFSM _ 800 (for 1 cycle) _ Amp Operating and Storage Junction Temperature Range (Reverse voltage applied) Peak Operating Junction Temperature (Forward Current Applied) TJ, T stg - - - 6 5 to + 1 2 5 _ .TJ (pk) 150 °c °c THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.1 Characteristic Symbol Min Typ...