MBR12020CT

Silicon Power Schottky Diode Features High Surge Capability Types from 20 V to 40 V VRRM Not ESD Sensitive MBR12020CT thru MBR12040CTR VRRM = 20 V - 40 V IF(AV) = 120 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12060CT(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) TC = 125 °C IFSM tp = 8.3 ms, half sine Maximum forward voltage (per leg) VF Reverse current at rated DC blocking voltage (per leg) IR Thermal characteristics Thermal resistance, junction-case, per leg RΘJC IFM = 60 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C 120 800 0.70 1 10 30 0.80 120 800 0.70 1 10 30 0.80 120 800 0.70 1 10 30 0.80 120 A 800 A 0.70 V 1 10 mA 30 0.80 °C/W Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr12035ct.pdf 1 MBR12020CT thru MBR12040CTR Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr12035ct.pdf 2 MBR1...