MBR12030CT Datasheet | Silicon Power Schottky Diode





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Part Number MBR12030CT
Description Silicon Power Schottky Diode
Manufacture GeneSiC
Total Page 3 Pages
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Features: Silicon Power Schottky Diode Features High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR12020CT thru MBR12040CTR VRRM = 20 V - 40 V IF(AV) = 120 A Twin Tower Pac kage Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbo l Conditions MBR12020CT(R) MBR12030CT (R) MBR12035CT(R) MBR12040CT(R) Unit R epetitive peak reverse voltage RMS reve rse voltage DC blocking voltage Operati ng temperature Storage temperature VRR M VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 4 0 28 40 -55 to 150 -55 to 150 V V V ° C °C Electrical characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR1202 0CT(R) MBR12030CT(R) MBR12035CT(R) MBR1 2060CT(R) Unit Average forward current (per pkg) Peak forward surge current ( per leg) IF(AV) TC = 125 °C IFSM tp = 8.3 ms, half sine Maximum forward voltage (per leg) VF Reverse curre.

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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
• Not ESD Sensitive
MBR12020CT thru MBR12040CTR
VRRM = 20 V - 40 V
IF(AV) = 120 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit
Repetitive peak
reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12060CT(R) Unit
Average forward
current (per pkg)
Peak forward surge
current (per leg)
IF(AV)
TC = 125 °C
IFSM tp = 8.3 ms, half sine
Maximum forward
voltage (per leg)
VF
Reverse current at
rated DC blocking
voltage (per leg)
IR
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC
IFM = 60 A, Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
120
800
0.70
1
10
30
0.80
120
800
0.70
1
10
30
0.80
120
800
0.70
1
10
30
0.80
120 A
800 A
0.70 V
1
10 mA
30
0.80 °C/W
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbr12035ct.pdf
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