Bridge Rectifier. 3N252 Datasheet

3N252 Rectifier. Datasheet pdf. Equivalent

Part 3N252
Description Glass Passivated Single-Phase Bridge Rectifier
Feature KBP005M thru KBP10M, 3N246 thru 3N252 Vishay General Semiconductor Glass Passivated Single-Phase Bri.
Manufacture Vishay
Datasheet
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3N252
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
~
~
+~~−
+
Case Style KBPM
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
e4
• High case dielectric strength
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
VF
TJ max.
1.5 A
50 V to 1000 V
60 A
5 µA
1.0 V
150 °C
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: KBPM
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
KBP KBP
PARAMETER
SYMBOL 005M 01M
3N246 3N247
Maximum repetitive peak reverse voltage (1)
Maximum RMS voltage (1)
Maximum DC blocking voltage (1)
VRRM 50 100
VRMS 35 70
VDC 50 100
Maximum average forward output rectified
current at TA = 40 °C
IF(AV)
Peak forward surge current
single half sine-wave (1)
Rating for fusing (t < 8.3 ms)
TA = 25 °C
TJ = 150 °C
IFSM
I2t
KBP
02M
3N248
200
140
200
KBP
04M
3N249
400
280
400
1.5
60
40
10
KBP
06M
3N250
600
420
600
KBP
08M
3N251
800
560
800
KBP
10M
3N252
1000
700
1000
UNIT
V
V
V
A
A
A2s
Operating junction and storage temperature range (1) TJ, TSTG
Note:
(1) JEDEC registered values
- 55 to + 150
°C
Document Number: 88531 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1



3N252
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
KBP
005M
3N246
KBP
01M
3N247
KBP
02M
3N248
KBP
04M
3N249
KBP
06M
3N250
KBP
08M
3N251
KBP
10M
3N252
UNIT
Maximum instantaneous forward 1.0 A
voltage drop per diode (1)
1.57 A
VF
1.0
1.3
V
Maximum DC reverse current
at rated DC blocking voltage
per diode (1)
TA = 25 °C
TA = 125 °C
IR
5.0
500
µA
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
15 pF
Note:
(1) JEDEC registered values
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
KBP
SYMBOL 005M
KBP
01M
KBP
02M
3N246 3N247 3N248
KBP
04M
3N249
KBP
06M
3N250
KBP
08M
3N251
KBP
10M
3N252
UNIT
Typical thermal resistance (1)
RθJA
RθJL
40
13
°C/W
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
KBP06M-E4/45
1.895
45
KBP06M-E4/51
1.895
51
3N250-E4/45
1.895
45
3N250-E4/51
1.895
51
BASE QUANTITY
30
600
30
600
DELIVERY MODE
Tube
Anti-static PVC tray
Tube
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.6
60 Hz Resistive or
1.4 Inductive Load
1.2
P.C.B. Mounted on
1.0 0.47 x 0.47" (12 x 12 mm)
Copper Pads
0.8
0.6
0.4
0.2
0
20
Capacitive Load
Ipk
IAV
=
5.0
10
20
(per leg)
40 60 80 100 120
Ambient Temperature (°C)
140 150
Figure 1. Derating Curve Output Rectified Current
60
Single Half Sine-Wave
50
40
30
TJ = 150 °C
20
TA = 25 °C
10
1.0 Cycle
0
1 10 100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88531
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 15-Apr-08





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