3N254

MDA200 series (3N253 thru 3N259) ® MOTOROLA MINIATURE INTEGRAL DIODE ASSEMBLIES · .. with silicon rectifier chips interconnected and encapsulated into voidless rectifier bridge circuits. High Resistance to Shock and Vibration High Dielectric Strength Built·ln Printed Circuit Board Stand·Offs II UL Recognized ROJA = 60°C/W MAXIMUM RATINGS Rating (Per Diode) Symbol 0 ",0 IDN ZNce( "':; ;Nzz~=e "':; IIDDNON "Nz'ce:(; :"~8,~:e~; .... :!: IDN ZNce( "':; fg~ ZNce( "':; 0 I"D'N~ "zN'c:e;( Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 '00 200 400 600 800 1000 Volts DC Output Voltage Resistive Load Capacitive Load Vdc 32 64 '27 255 382 5'0 640 Volts Vdc 50 '00 200 400 600 800 1000 Volts Sine Wave RMS Input Voltage VR(RMSI 35 70 '40 280 420 560 700 Volts Average Rectified Forward Current ..(single phase bridge operation, 10 resistive load, 60 Hz, TA" 550 CI .2.0 Amp Non-Repetitive Peak Surge Current (Preceded and followed by rated current and voltage, TA '" 55°C) Operating and Storage Junction Temperature Range IFSM ~ 60 (for 1 cycle) _______ Amp .TJ.T,tg -55to+'65- °c ELECTRICAL CHARACTERISTICS Characteristic Instantaneous Forward Voltage (Per Diode) {iF =3.'4 Amp, TJ =250CI Reverse Current (Per Diode) (Rated VR, TA =250 C) ,.,Symbol Typ Max Unit vF '.0 Volts IR - "A '0 MECHANICAL CHARACTERISTICS CASE: Transfer Molded Plastic POLARITV: Terminal·designation on case Pin 1 (+) for D...