MBR5825H

® MOTOROLA IN5823,lN5824 IN5825 MBRS82S,H, H1 Designers Data Sheet HOT CARRIER POWER RECTIFIERS · .. employing the Schottky Barrier principle in a large area metal- to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes. Extremely Low vF High Surge Capacity Low Stored Charge, Majority TX Version Available Carrier Conduction Low Power Loss/ High Efficiency Designer's Data for ~'Worst Case" Conditions The Designers Data sheets permit the design of most circuits entirely from the information presented. Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design. SCHOTTKY BARRIER RECTIFIERS 5 AMPERE 20.30.40 VOLTS "MAXIMUM RATINGS Rating Symbol 1N5823 1 N5824 1N5825 M8R5825H, H1 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non~Repet;tjve Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current VR(equiv)'; 0.2 VR (dc), TC = 75°C VR(equiv)'; 0.2 VR (dc), TL = 80°C R6JA = 25°C/W, P.C. Board Mounting, See Note 3) VRRM VRWM VR VRSM VR(RMS) 10 20 24 14 .... 30 36 21 15 5.0 40 Volts 48 Volts 28 Volts .. Amp Ambient Temperature Rated VR (dc), PF(AV) = 0 R6JA = 25°C/W Non-Repetitivel Peak Surge Current (Surge applied at rated load condit...