INS829, INS830 INS831
MBRS831,H, HI
® MOTOROLA
De!o'>igneJ'!o'> Data Sheet
HOT CARRIER POWER RECTIFIERS
· .. employin...
INS829, INS830 INS831
MBRS831,H, HI
® MOTOROLA
De!o'>igneJ'!o'> Data Sheet
HOT CARRIER POWER RECTIFIERS
· .. employing the
Schottky Barrier principle in a large area metalto-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes.
SCHOTTKY BARRIER RECTIFIERS
25 AMPERE 20,30,40 VOLTS
Extremely Low vF
Low Power Loss/High Efficiency
Low Stored Charge, Majority High Surge Capacity
Carrier Conduction
TX Version Available
II
Designer's Data for "Worst Case" Conditions
The Designers Data sheets permit the design of most circuits entirely from the information presented. Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
"MAXIMUM RATINGS
Rating
Symbol
1N 5829
IN 6831 1N M8R 5830 5831H,Hl
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM VRWM VR
20
30
40 Volts
Non-Repetitive Peak Reverse Voltage VRSM
24
36
48 Volts
Average Rectified Forward Current VR(equivl<; 0.2 VR (del, TC 85°C
10
.
Amp
25
Ambient Temperature Rated VR (de), PF(AV) = 0 R8JA = 3.5°C/W
TA °C
90 85
80
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase 60 Hz)
Operating and Storage Junction Temperature Range (Reverse voltage app...