MBR5831H

INS829, INS830 INS831 MBRS831,H, HI ® MOTOROLA De!o'>igneJ'!o'> Data Sheet HOT CARRIER POWER RECTIFIERS · .. employing the Schottky Barrier principle in a large area metalto-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes. SCHOTTKY BARRIER RECTIFIERS 25 AMPERE 20,30,40 VOLTS Extremely Low vF Low Power Loss/High Efficiency Low Stored Charge, Majority High Surge Capacity Carrier Conduction TX Version Available II Designer's Data for "Worst Case" Conditions The Designers Data sheets permit the design of most circuits entirely from the information presented. Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design. "MAXIMUM RATINGS Rating Symbol 1N 5829 IN 6831 1N M8R 5830 5831H,Hl Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 Volts Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 Volts Average Rectified Forward Current VR(equivl<; 0.2 VR (del, TC 85°C 10 . Amp 25 Ambient Temperature Rated VR (de), PF(AV) = 0 R8JA = 3.5°C/W TA °C 90 85 80 Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase 60 Hz) Operating and Storage Junction Temperature Range (Reverse voltage app...