Document
® MOTOROLA
MBR320M MBR330M MBR340M
SCHOTTKY BARRIER RECTIFIERS
3 AMPERE 20, 30, 40 VOLTS
HOT CARRIER POWER RECTIFIERS
. employing the Schottky Barrier principle in a large area metal-ta-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremelv Low vF • Low Stored Charge, Majority
Carrier Conduction
• Low Power Loss/High Efficiency • High Surge Capacity
II
MAXIMUM RATINGS
Rating
Symbol MBR320M MBR330M MBR340M Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average Rectified Forward Current VRlequiv)';; 0.2VR Ide), TC = 65°C VRlacuiv).;;0.2VR,lde), TL = 90°C I ROJA= 25 0 C/W, P,C. Board Mounting, See Note 3)
VRRM VRWM
VR
VRSM
10
20
24
......
30 40 Volts
36 48 Volts
.,. Amp
15 3.0
Ambient Temperature Rated VR Idel. PFIAV) = 0 ROJA = 250 C/W
Non-Repetitive Peak Surge Current (surge applied at rated load conditions. halfwave, single phase60 Hz)
TA IFSM
J65 60 55
- 500 Ifor 1 cycle) -
°c Amp
Operating and Storage Junction Temperature Range (Reverse Voltage appl ied)
Peak Operating Junction Temperature IForward Current Appl ied)
TJ,Tstg TJlpk)
- - - -65 to +125 _
. 150
..
°c °c
~,
1-' D
K
L
rC
K
L,
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max
Maximum I nstantaneous Forward Voltage 11) (iF = 5.0 Amp)
vF -
- 0.450
Maximum Instantaneous Reverse Current@rateddeVoltage (1) TC = 25°C TC = l00Dc
;R
- - 10 - - 75
(1) Pulse Test: Pulse WIdth - 3001'5, Duty Cycle = 2.0%.
Unit Volts
rnA
MILLIMETERS DIM MIN MAX
A - 11.43 B - 8.89
C 7.62 D 1.17 1.42 K 24.89
INCHES MIN MAX
-
0.046 0.980
0.450 0.350 0.300 0.056
CASE 60
MECHANICAL CHARACTER ISTICS
CASE: Welded, hermetically sealed construction. FINISH: All external surfaces corrosion-resistant
and the terminal leads are readily solderable.
POLARITY: Cathode to case. MOUNTING POSITIONS: Any
3-86
MBR320M, MBR330M, MBR340M
NOTE 1: DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway must be considered when operating th is rectifier at reverse voltages above 0.1 VRWM' Proper derating may be accomplished by use of equation (1):
TA(max) = TJ(max) - R8JA PF(AV) - R9JA PR(AV) (1) where
T A(max) =Maximum allowable ambient temperature TJ(max) = Maximums/lowable junction temperature
11250C or the temperature at which thermal runaway occurs, whichever is lowestl.
PFIAVI = Average forward power dissipation PRIAV) = Average reverse power dissipation
ROJA = Junction-to-ambient thermal resistance Figures 1, 2 and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2):
TR = TJ(max) - R8JAPR(AV)
(2)
Substituting equation (2) into equation (1) yields: TA(max) = TR - R8JA PF(AV)
(3)
Inspection of equations (2) and (3) reveals that TA is the ambient temperature at which thermal runaway occurs or where TJ = 125°C,
when forward power is zero. The transition from one boundary
condition to the other is evident on the curves of Figures 1.2 and
3 as a difference in the rate of change of the slope in the vicinity
of 1150C_ The data of Figures 1, 2 and 3 iobased upon de condi-
tions. For use in common rectifier circuits, Table I indicates suggested factors for an equivalent de voltage to use for conservative
design; i.e.:
VR(equiv) = VIN(PK) x F
(4)
The Factor F is derived by considering the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.
Example: Find TA(max) lor MBR340M operated in a 12-Volt dc supply using a bridge circuit with capacitive filter such that IDe =
10 A (IF(AV) = 5 A), I(PK)/I(AV) = 10,Input Voltage = 10 V(rms), R8JA = 100C/W.
1:_Step 1: Find VR(equiv). Read F = 0.651rom Table
VR(equiv) = (1.41)(10)(0.65) = 9.2 V
Step 2: Step 3:
Find TR from Figure 3. Read TR = 1170C@ VR =
9.2 it & R9JA = 100 C/W_
Find PF(AV) from Figure 4. Read PF(AV) = 6_3W
Step 4:
@I(PK)= 10 & IF(AV) = 5 A
!I(AV)
Find A(~ax) from equation (31. TA(max) = 117-(10) (6.3) - 54 C_
TABLE I - VALUES FOR FACTOR F
Circuit Load
Half Wave
Full Wave, Bridge
IResistive Capacitive (1) Resistive 1_ Capacitive
Full Wave,
Center Tapped (1), (2!
IResistive Capacitive
Sine Wave Square Wave
I0_5
0_75
1.3 1.5
I0.5
0.75
0_65 0.75
I1.0 1.3
1.5 1.5
.( I)Note that VR(PK)"'2 Vin(PK)
(2)Use Ime to center tap voltage for Vin-
FIGURE 1-MAXIMUM REFERENCE TEMPERATURE - MBR320M
125
~~115
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- , """ ,""""'~" 105
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