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MBR320M Dataheets PDF



Part Number MBR320M
Manufacturers Motorola
Logo Motorola
Description SCHOTTKY BARRIER RECTIFIERS
Datasheet MBR320M DatasheetMBR320M Datasheet (PDF)

® MOTOROLA MBR320M MBR330M MBR340M SCHOTTKY BARRIER RECTIFIERS 3 AMPERE 20, 30, 40 VOLTS HOT CARRIER POWER RECTIFIERS . employing the Schottky Barrier principle in a large area metal-ta-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremelv Low vF • Low Stored Charge, Majority.

  MBR320M   MBR320M


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® MOTOROLA MBR320M MBR330M MBR340M SCHOTTKY BARRIER RECTIFIERS 3 AMPERE 20, 30, 40 VOLTS HOT CARRIER POWER RECTIFIERS . employing the Schottky Barrier principle in a large area metal-ta-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremelv Low vF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • High Surge Capacity II MAXIMUM RATINGS Rating Symbol MBR320M MBR330M MBR340M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non-Repetitive Peak Reverse Voltage Average Rectified Forward Current VRlequiv)';; 0.2VR Ide), TC = 65°C VRlacuiv).;;0.2VR,lde), TL = 90°C I ROJA= 25 0 C/W, P,C. Board Mounting, See Note 3) VRRM VRWM VR VRSM 10 20 24 ...... 30 40 Volts 36 48 Volts .,. Amp 15 3.0 Ambient Temperature Rated VR Idel. PFIAV) = 0 ROJA = 250 C/W Non-Repetitive Peak Surge Current (surge applied at rated load conditions. halfwave, single phase60 Hz) TA IFSM J65 60 55 - 500 Ifor 1 cycle) - °c Amp Operating and Storage Junction Temperature Range (Reverse Voltage appl ied) Peak Operating Junction Temperature IForward Current Appl ied) TJ,Tstg TJlpk) - - - -65 to +125 _ . 150 .. °c °c ~, 1-' D K L rC K L, THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Maximum I nstantaneous Forward Voltage 11) (iF = 5.0 Amp) vF - - 0.450 Maximum Instantaneous Reverse Current@rateddeVoltage (1) TC = 25°C TC = l00Dc ;R - - 10 - - 75 (1) Pulse Test: Pulse WIdth - 3001'5, Duty Cycle = 2.0%. Unit Volts rnA MILLIMETERS DIM MIN MAX A - 11.43 B - 8.89 C 7.62 D 1.17 1.42 K 24.89 INCHES MIN MAX - 0.046 0.980 0.450 0.350 0.300 0.056 CASE 60 MECHANICAL CHARACTER ISTICS CASE: Welded, hermetically sealed construction. FINISH: All external surfaces corrosion-resistant and the terminal leads are readily solderable. POLARITY: Cathode to case. MOUNTING POSITIONS: Any 3-86 MBR320M, MBR330M, MBR340M NOTE 1: DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating th is rectifier at reverse voltages above 0.1 VRWM' Proper derating may be accomplished by use of equation (1): TA(max) = TJ(max) - R8JA PF(AV) - R9JA PR(AV) (1) where T A(max) =Maximum allowable ambient temperature TJ(max) = Maximums/lowable junction temperature 11250C or the temperature at which thermal runaway occurs, whichever is lowestl. PFIAVI = Average forward power dissipation PRIAV) = Average reverse power dissipation ROJA = Junction-to-ambient thermal resistance Figures 1, 2 and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2): TR = TJ(max) - R8JAPR(AV) (2) Substituting equation (2) into equation (1) yields: TA(max) = TR - R8JA PF(AV) (3) Inspection of equations (2) and (3) reveals that TA is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1.2 and 3 as a difference in the rate of change of the slope in the vicinity of 1150C_ The data of Figures 1, 2 and 3 iobased upon de condi- tions. For use in common rectifier circuits, Table I indicates suggested factors for an equivalent de voltage to use for conservative design; i.e.: VR(equiv) = VIN(PK) x F (4) The Factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. Example: Find TA(max) lor MBR340M operated in a 12-Volt dc supply using a bridge circuit with capacitive filter such that IDe = 10 A (IF(AV) = 5 A), I(PK)/I(AV) = 10,Input Voltage = 10 V(rms), R8JA = 100C/W. 1:_Step 1: Find VR(equiv). Read F = 0.651rom Table VR(equiv) = (1.41)(10)(0.65) = 9.2 V Step 2: Step 3: Find TR from Figure 3. Read TR = 1170C@ VR = 9.2 it & R9JA = 100 C/W_ Find PF(AV) from Figure 4. Read PF(AV) = 6_3W Step 4: @I(PK)= 10 & IF(AV) = 5 A !I(AV) Find A(~ax) from equation (31. TA(max) = 117-(10) (6.3) - 54 C_ TABLE I - VALUES FOR FACTOR F Circuit Load Half Wave Full Wave, Bridge IResistive Capacitive (1) Resistive 1_ Capacitive Full Wave, Center Tapped (1), (2! IResistive Capacitive Sine Wave Square Wave I0_5 0_75 1.3 1.5 I0.5 0.75 0_65 0.75 I1.0 1.3 1.5 1.5 .( I)Note that VR(PK)"'2 Vin(PK) (2)Use Ime to center tap voltage for Vin- FIGURE 1-MAXIMUM REFERENCE TEMPERATURE - MBR320M 125 ~~115 --w - , """ ,""""'~" 105 ::-::l:"" .................: ~ t"..-..-.... ~ ...... :--..... .t."...-. ..... :..:..-......:....:... rt'--.:..:..".


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