NXPSC12650B

NXPSC12650B Silicon Carbide Diode 31 August 2018 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO263 (D2PAK) plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom/Server SMPS UPS PV inverter PC Silverbox LED/OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Tmb ≤ 106 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3; Fig. 4 Static characteristics VF forward voltage IF = 12 A; Tj = 25 °C; Fig. 6 IF = 12 A; Tj = 150 °C; Fig. 6 Min Typ Max Unit - - 650 V - - 12 A - 1.5 1.7 V - 1.8 2.1 V WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 n.c. not connected 2 K cathode[1] 3 A anode mb K mounting base; connected to cathode NXPSC12650B Silicon Carbide Diode Graphic symbol KA 001aaa020 D2PAK (TO263N) [1] It is not possible to connect to pin 2 of the TO263 package. 6. Ordering information Table 3. Ordering information Type number Package Name NXPSC12650B D2P...