Dual ultrafast power diode
BYQ42E-200
Dual ultrafast power diode
Rev.01 - 5 June 2018
Product data sheet
1. General description
Dual ultrafast po...
Description
BYQ42E-200
Dual ultrafast power diode
Rev.01 - 5 June 2018
Product data sheet
1. General description
Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package.
2. Features and benefits
Fast switching Low thermal resistance High thermal cycling performance Very low forward voltage drop High reverse surge capability Soft recovery characteristic
3. Applications
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data Symbol Parameter Absolute maximum rating
Conditions
VRRM IF(AV) IO(AV) IFSM
repetitive peak reverse voltage average forward current
average output current
non-repetitive peak forward current
δ = 0.5; Tmb ≤ 114 °C; SQW; Fig. 1; Fig. 2; Fig. 3
δ = 0.5; Tmb ≤ 114 °C; SQW; both diodes conducting
tp = 10 ms; Tj(init) = 25 °C; SIN; per diode; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; SIN; per diode
VESD Symbol
electrostatic discharge voltage
Parameter
HBM; all pins; C =250 pF; R = 1.5 kΩ Conditions
Static characteristics
VF forward voltage
IF = 15 A; Tj = 25 °C; Fig. 6
IF = 30 A; Tj = 150 °C; Fig. 6 IF = 15 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; ramp recovery; Fig. 7
Values
Unit
200 V 15 A 30 A 150 A 165 A 8 kV Min Typ Max Unit
- 0.95 1.05 V - 1 1.2 V - 0.78 0.85 V
- 18 25 ns
WeEn Semiconductors
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 A1
anode 1
...
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