WNB111S5APTS

WNB111S5APTS Ultrafast power diode - Bare die Rev.01 - 9 October 2018 1. General description Ultrafast power diode (Bare die after sawn). 2. Features and benefits Fast reverse recovery Low leakage current Low forward voltage drop Bare die 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM* repetitive peak reverse voltage IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF** forward voltage Dynamic characteristics trr** reverse recovery time IF = 15 A; Tj = 25 °C IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C 4. Ordering information Table 2. Ordering information Type number Package Name Description WNB111S5APTS Wafer Bare die on wafer Product data sheet Min Typ Max Unit - - 600 V - - 15 A - 1.4 1.8 V - 28 60 ns Version Die WeEn Semiconductors WNB111S5APTS Ultrafast power diode - Bare die 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM* VRWM* VR* IF(AV)** IFRM** IFSM** Tstg** Tj** repetitive peak reverse voltage crest working reverse voltage reverse voltage average forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature DC δ = 0.5; square-wave pulse δ = 0.5; tp = 25 μs; square-wave pulse tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse tp = 8.3 ms; Tj(init) = 25 °C;sine-wave pulse Min Max Unit - 600 V - 60...