BYV32G-200

BYV32G-200 Dual ultrafast power diode Rev.02 - 7 March 2018 Product data sheet 1. General description Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package. 2. Features and benefits High reverse voltage surge capability High thermal cycling performance Low thermal resistance Very low on-state loss Soft recovery characteristic minimizes power consuming oscillations 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VRRM repetitive peak reverse voltage IO(AV) average output current IRRM repetitive peak reverse current VESD electrostatic discharge voltage IFRM repetitive peak forward current IFSM non-repetitive peak forward current Symbol Parameter Static characteristics VF forward voltage Dynamic characteristics Conditions δ = 0.5; square-wave pulse; Tmb ≤ 115 °C; both diodes conducting; Fig. 1; Fig. 2 δ = 0.001; tp = 2 μs; HBM; C = 250 pF; R = 1.5 kΩ; all pins δ = 0.5; tp = 25 μs; Tmb ≤ 115 °C; per diode tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per diode Conditions IF = 8 A; Tj = 150 °C; Fig. 4 trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; ramp recovery; Fig. 5 IF = 0.5 A to IR = 1 A; Tj = 25 °C; measured at IR= 0.25 A; step recovery; Fig. 6 Values Unit 200 V 20 A 0.2 A 8 kV 20 A 125 A 137 A Min Typ Max Unit...