WNSC201200W

WNSC201200W Silicon Carbide Diode Rev.03 - 12 November 2020 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies. h RoHS alogen-Free 2. Features and benefits Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant High junction operating temperature capability (Tj(max) = 175 °C) 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Absolute maximum rating VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 131 °C; Fig. 1; Fig. 2; Fig. 3; Fig. 4 Tj junction temperature Symbol Parameter Static characteristics VF forward voltage Dynamic characteristics Qr recovered charge Conditions IF = 20 A; Tj = 25 °C; Fig. 6 IF = 20 A; Tj = 150 °C; Fig. 6 IF = 20 A; Tj = 175 °C; Fig. 6 IF = 20 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 8 Values Unit 1200 V 20 A 175 °C Min Typ Max Unit - 1.4 1.6 V - 1.85 2.3 V - 2 2.6 V - 52 - nC WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol De...