SiRA20DP

www.vishay.com SiRA20DP Vishay Siliconix N-Channel 25 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 25 0.00058 0.00082 61 100 a, g Single FEATURES TrenchFET® Gen IV power MOSFET Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Synchronous rectification High power density DC/DC Synchronous buck converter OR-ing Load switching Battery management D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 Single SiRA20DP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current TC = 25 °C TA = 25 °C Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 25 +16 / -12 100 a 100 a 81.7 b, c 65.3 b, c 500 94.5 5.6 b, c 60 180...