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transistors. BC53PAS Datasheet |
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| Part | BC53PAS |
| Description | 1A PNP medium power transistors |
| Manufacture | nexperia |
| Page | 15 Pages |
| Datasheet |
BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
Rev. 1 — 19 June 2015
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3
(SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium
power capability and visible and solderable side pads.
Table 1. Product overview
Type number[1]
Package
BC51PAS
DFN2020D-3
BC52PAS
BC53PAS
SOT1061D
NPN complement
BC54PAS
BC55PAS
BC56PAS
[1] Valid for all available selection groups.
1.2 Features and benefits
High collector current capability
Three current gain selections
IC and ICM
Reduced Printed-Circuit Board (PCB) Leadless very small SMD plastic
area requirements
package with medium power capability
Exposed heat sink for excellent thermal Suitable for Automatic Optical
and electrical conductivity
Inspection (AOI) of solder joint
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Battery driven devices
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCEO
collector-emitter voltage open base
BC51PAS series
BC52PAS series
BC53PAS series
Min Typ Max Unit
- - 45 V
- - 60 V
- - 80 V
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Nexperia
BC51PAS; BC52PAS; BC53PAS
45 V/60 V/80 V, 1 A PNP medium power transistors
Table 2. Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
IC collector current
ICM peak collector current single pulse; tp 1 ms
hFE DC current gain
VCE = 2 V; IC = 150 mA
hFE selection -10
VCE = 2 V; IC = 150 mA
hFE selection -16
VCE = 2 V; IC = 150 mA
[1] Pulse test: tp 300 ms; 0.02.
2. Pinning information
Min Typ Max Unit
- - 1 A
- - 2 A
[1] 63 -
250
[1] 63 -
160
[1] 100 -
250
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
7UDQVSDUHQWWRSYLHZ
V\P
3. Ordering information
Table 4. Ordering information
Type number[1] Package
Name
Description
BC51PAS series
BC52PAS series
BC53PAS series
DFN2020D-3
plastic thermal enhanced ultra thin small
outline package; no leads; 3 terminals;
body 2 2 0.65 mm.
[1] Valid for all available selection groups.
Version
SOT1061D
BC51_52_53PAS_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 June 2015
© Nexperia B.V. 2017. All rights reserved
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| Features | Datasheet pdf BC51PAS; BC52PAS; BC53PAS 45 V/60 V/80 V, 1 A PNP medium power transistors Re v. 1 — 19 June 2015 Product data she et 1. Product profile 1.1 General des cription PNP medium power transistor se ries encapsulated in an ultra thin DFN2 020D-3 (SOT1061D) leadless small Surfac e-Mounted Device (SMD) plastic package with medium power capability and visibl e and solderable side pads. Table 1. P roduct overview Type number[1] Packag e BC51PAS DFN2020D-3 BC52PAS BC53PA S SOT1061D NPN complement BC54PAS BC5 5PAS BC56PAS [1] Valid for all availab le selection groups. 1.2 Features and benefits High collector current ca pability Three current gain select ions IC and ICM Reduced Printed-Ci rcuit Board (PCB) Leadless very sma ll SMD plastic area requirements pack age with medium power capability E xposed heat sink for excellent thermal Suitable for Automatic Optical and electrical conductivity Inspection (A OI) of solder joint AEC-Q101 qualified 1.3 Applications Linear voltage . |
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