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BCM856DS Dataheets PDF



Part Number BCM856DS
Manufacturers nexperia
Logo nexperia
Description PNP/PNP matched double transistors
Datasheet BCM856DS DatasheetBCM856DS Datasheet (PDF)

BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package Nexperia BCM856BS SOT363 BCM856BS/DG BCM856DS SOT457 BCM856DS/DG JEITA SC-88 SC-74 Package configuration very small small 1.2 Features .

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BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package Nexperia BCM856BS SOT363 BCM856BS/DG BCM856DS SOT457 BCM856DS/DG JEITA SC-88 SC-74 Package configuration very small small 1.2 Features I Current gain matching I Base-emitter voltage matching I Drop-in replacement for standard double transistors I AEC-Q101 qualified 1.3 Applications I Current mirror I Differential amplifier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per transistor VCEO IC hFE collector-emitter voltage collector current DC current gain Conditions open base VCE = −5 V; IC = −2 mA Min Typ Max Unit - - −65 V - - −100 mA 200 290 450 Nexperia BCM856BS; BCM856DS PNP/PNP matched double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Per device hFE1/hFE2 hFE matching VBE1−VBE2 VBE matching VCE = −5 V; IC = −2 mA VCE = −5 V; IC = −2 mA Min Typ Max Unit [1] 0.9 1 - [2] - - 2 mV [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 Simplified outline Graphic symbol 654 654 123 001aab555 TR2 TR1 123 sym018 3. Ordering information Table 4. Ordering information Type number Package Name Description BCM856BS SC-88 plastic surface-mounted package; 6 leads BCM856BS/DG BCM856DS SC-74 plastic surface-mounted package (TSOP6); 6 leads BCM856DS/DG Version SOT363 SOT457 BCM856BS_BCM856DS_1 Product data sheet Rev. 01 — 7 August 2008 © Nexperia B.V. 2017. All rights reserved 2 of 14 Nexperia BCM856BS; BCM856DS PNP/PNP matched double transistors 4. Marking Table 5. Marking codes Type number BCM856BS BCM856BS/DG BCM856DS BCM856DS/DG [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Marking code[1] *BS PB* DS R9 Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per transistor VCBO VCEO VEBO IC ICM Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation BCM856BS (SOT363) BCM856BS/DG (SOT363) open emitter open base open collector single pulse; tp ≤ 1 ms Tamb ≤ 25 °C - [1] - BCM856DS (SOT457) BCM856DS/DG (SOT457) [1] - Per device Ptot total power dissipation BCM856BS (SOT363) BCM856BS/DG (SOT363) Tamb ≤ 25 °C [1] - BCM856DS (SOT457) BCM856DS/DG (SOT457) [1] - Tj Tamb Tstg junction temperature ambient temperature storage temperature −55 −65 Max.


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