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BCP56-16
Low power NPN Transistor
General features
■ Silicon epitaxial planar NPN medium voltage transistor
■ SOT-223 plastic package for surface mounting circuits
■ Available in tape & reel packing ■ In compliance with the 2002/93/EC European
Directive ■ The PNP complementary type is BCP53-16
Applications
■ Medium voltage load switch transistor ■ Output stage for audio amplifiers circuits ■ Automotive post-voltage regulation
2 3
2 1
SOT-223
Internal schematic diagram
Order codes
Part Number BCP56-16
Marking BCP5616
Package SOT-223
June 2006
Rev 3
Packing Tape & reel
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Contents
BCP56-16
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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BCP56-16
1 Electrical ratings
Table 1. Symbol
Absolute maximum rating Parameter
VCBO VCEO VEBO
IC ICM IB IBM Ptot Tstg TJ
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tamb = 25°C Storage temperature Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-amb Thermal resistance junction-ambient (1)__max 1. Device mounted on PCB area of 1 cm2.
Electrical ratings
Value 100 80 5 1 1.5 0.1 0.2 1.6
-65 to 150 150
Unit V V V A A A A W °C °C
Value 78
Unit °C/W
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Electrical characteristics
2 Electrical characteristics
BCP56-16
(Tcase = 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test Conditions
ICBO
Collector cut-off current (IE =0)
V(BR)CEO (2)
Collector-emitter breakdown voltage
(IB =0)
V(BR)CBO
Collector-base breakdown voltage
(IE =0)
V(BR)EBO
Emitter-base breakdown voltage (IC =0)
VCE(sat) (2)
Collector-emitter saturation voltage
VBE(on) (2) Base-emitter on voltage
hFE (2) DC current gain
VCB = 30V VCB = 30V;
IC = 20mA
IC = 100µA
IE = 10µA
IC = 500mA IC = 500mA IC = 5mA IC = 150mA IC = 500mA
Tj = 125°C
IB = 50mA VCE = 2V VCE = 2V VCE = 2V VCE = 2V
Note (2) Pulsed duration = 300 µs, duty cycle ≤1.5%
Min. Typ. Max. Unit 100 nA 10 µA
80 V
100 V
5V
0.5 V 1V 40 100 250 25
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BCP56-16
2.1 Electrical characteristics (curves)
Electrical characteristics
Figure 1. DC current gain
Figure 2. Collector-emitter saturation voltage
Figure 3. Base-emitter saturation voltage
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Package mechanical data
3 Package mechanical data
BCP56-16
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These.