DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DPN NPN/PNP general purpose transistor
Product data sh...
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC817DPN
NPN/
PNP general purpose
transistor
Product data sheet Supersedes data of 2002 Aug 09
2002 Nov 22
NXP Semiconductors
NPN/
PNP general purpose
transistor
Product data sheet
BC817DPN
FEATURES
High current (500 mA) 600 mW total power dissipation Replaces two SOT23 packaged
transistors on same
PCB area.
APPLICATIONS
General purpose switching and amplification Complementary driver Half and full bridge driver.
DESCRIPTION
NPN/
PNP transistor pair in a SOT457 (SC-74) plastic package.
MARKING
TYPE NUMBER BC817DPN
MARKING CODE N4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO IC ICM
collector-emitter voltage collector current (DC) peak collector current
MAX. UNIT 45 V 500 mA 1A
PINNING
PIN 1, 4 emitter 2, 5 base 6, 3 collector
DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
handbook, halfpag6e 5 4
65 4
TR2 TR1
12 Top view
3
MAM445
123
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per
transistor; for the
PNP transistor with negative polarity
VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
open emitter open base open collector
Tamb ≤ 25 °C; note ...