Document
BC856BMB
60 V, 100 mA PNP general-purpose transistor
19 August 2015
Product data sheet
1. General description
PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
NPN complement: BC846BMB.
2. Features and benefits
• Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Power dissipation comparable to SOT23 • AEC-Q101 qualified
3. Applications
• General-purpose switching and amplification • Mobile applications
4. Quick reference data
Table 1. Symbol VCEO
IC hFE
Quick reference data Parameter collector-emitter voltage
collector current
DC current gain
Conditions open base
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
Min Typ Max Unit - - -60 V
-220 -
-100 475
mA
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector
Simplified outline
1 3
2
Transparent top view
DFN1006B-3 (SOT883B)
Graphic symbol
3
1
2 sym013
Nexperia
BC856BMB
60 V, 100 mA PNP general-purpose transistor
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BC856BMB
DFN1006B-3
Description
DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
Version SOT883B
7. Marking
Table 4. Marking codes Type number BC856BMB
PIN 1 INDICATION
Marking code 0101 1010
READING DIRECTION
READING EXAMPLE: 0111 1011
READING DIRECTION
Fig. 1. DFN1006B-3 (SOT883B) binary marking code description
MARKING CODE (EXAMPLE)
006aac673
BC856BMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 August 2015
© Nexperia B.V. 2017. All rights reserved
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Nexperia
BC856BMB
60 V, 100 mA PNP general-purpose transistor
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IBM peak base current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Min Max Unit - -80 V
- -60 V
- -6 V
- -100 mA
- -200 mA
- -200 mA
[1] -
250 mW
- 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
300 aaa-019152
Ptot (mW)
200
100
0 -75 -25
25
FR4 PCB, standard footprint Fig. 2. Power derating curve DFN1006B-3 (SOT883B)
75 125 175 Tj (°C)
BC856BMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 August 2015
© Nexperia B.V. 2017. All rights reserved
3 / 12
Nexperia
BC856BMB
60 V, 100 mA PNP general-purpose transistor
9. Thermal characteristics
Table 6. Symbol Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to ambient
Conditions in free air
Min Typ Max Unit [1] - - 500 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
103 Zth(j-a) (K/W)
102
10
duty cycle =
1 0.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01 0
006aab603
1 10- 5
10- 4
10- 3
10- 2
10- 1
FR4 PCB, standard footprint
1
10 102 103 tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BC856BMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 August 2015
© Nexperia B.V. 2017. All rights reserved
4 / 12
Nexperia
BC856BMB
60 V, 100 mA PNP general-purpose transistor
10. Characteristics
Table 7. Symbol ICBO
IEBO hFE VCEsat
VBEsat
VBE
CC CE fT NF
Characteristics Parameter
Conditions
collector-base cut-off current
VCB = -30 V; IE = 0 A; Tamb = 25 °C VCB = -30 V; IE = 0 A; Tj = 150 °C
emitter-base cut-off current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
collector-emitter saturation voltage
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter saturation IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
voltage
IC = -100 mA; IB = -5 mA; Tamb = 25 °C
base-emitter voltage VCE = -5 V; IC = -2 mA; Tamb = 25 °C
VCE = -5 V; IC = -10 mA; Tamb = 25 °C
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C
emitter capacitance
VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C
transition frequency
VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C
noise figure
VCE = -5 V; IC = -200 µA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz; Tamb = 25 °C
Min Typ Max Unit - - -15 nA - - -5 µA - - -100 nA
220 ---
475 -200 -400
mV mV
-600 -
-700 -850 -
-750 -820 2.5
mV mV mV mV pF
- 4.5 - pF
100 - - MHz
- - 10 dB
BC856BMB
Product data sheet
All informat.