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BC856BMB Dataheets PDF



Part Number BC856BMB
Manufacturers nexperia
Logo nexperia
Description 100mA PNP general-purpose transistor
Datasheet BC856BMB DatasheetBC856BMB Datasheet (PDF)

BC856BMB 60 V, 100 mA PNP general-purpose transistor 19 August 2015 Product data sheet 1. General description PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: BC846BMB. 2. Features and benefits • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Power dissipation comparable to SOT23 • AEC-Q101 qualified 3. Applications • General-purpose switching and amplification • Mobile ap.

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BC856BMB 60 V, 100 mA PNP general-purpose transistor 19 August 2015 Product data sheet 1. General description PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: BC846BMB. 2. Features and benefits • Leadless ultra small SMD plastic package • Low package height of 0.37 mm • Power dissipation comparable to SOT23 • AEC-Q101 qualified 3. Applications • General-purpose switching and amplification • Mobile applications 4. Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = -5 V; IC = -2 mA; Tamb = 25 °C Min Typ Max Unit - - -60 V -220 - -100 475 mA 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline 1 3 2 Transparent top view DFN1006B-3 (SOT883B) Graphic symbol 3 1 2 sym013 Nexperia BC856BMB 60 V, 100 mA PNP general-purpose transistor 6. Ordering information Table 3. Ordering information Type number Package Name BC856BMB DFN1006B-3 Description DFN1006B-3: leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm Version SOT883B 7. Marking Table 4. Marking codes Type number BC856BMB PIN 1 INDICATION Marking code 0101 1010 READING DIRECTION READING EXAMPLE: 0111 1011 READING DIRECTION Fig. 1. DFN1006B-3 (SOT883B) binary marking code description MARKING CODE (EXAMPLE) 006aac673 BC856BMB Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © Nexperia B.V. 2017. All rights reserved 2 / 12 Nexperia BC856BMB 60 V, 100 mA PNP general-purpose transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current ICM peak collector current single pulse; tp ≤ 1 ms IBM peak base current Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Min Max Unit - -80 V - -60 V - -6 V - -100 mA - -200 mA - -200 mA [1] - 250 mW - 150 °C -55 150 °C -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 300 aaa-019152 Ptot (mW) 200 100 0 -75 -25 25 FR4 PCB, standard footprint Fig. 2. Power derating curve DFN1006B-3 (SOT883B) 75 125 175 Tj (°C) BC856BMB Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © Nexperia B.V. 2017. All rights reserved 3 / 12 Nexperia BC856BMB 60 V, 100 mA PNP general-purpose transistor 9. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Min Typ Max Unit [1] - - 500 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 006aab603 1 10- 5 10- 4 10- 3 10- 2 10- 1 FR4 PCB, standard footprint 1 10 102 103 tp (s) Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BC856BMB Product data sheet All information provided in this document is subject to legal disclaimers. 19 August 2015 © Nexperia B.V. 2017. All rights reserved 4 / 12 Nexperia BC856BMB 60 V, 100 mA PNP general-purpose transistor 10. Characteristics Table 7. Symbol ICBO IEBO hFE VCEsat VBEsat VBE CC CE fT NF Characteristics Parameter Conditions collector-base cut-off current VCB = -30 V; IE = 0 A; Tamb = 25 °C VCB = -30 V; IE = 0 A; Tj = 150 °C emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C DC current gain VCE = -5 V; IC = -2 mA; Tamb = 25 °C collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C base-emitter saturation IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C voltage IC = -100 mA; IB = -5 mA; Tamb = 25 °C base-emitter voltage VCE = -5 V; IC = -2 mA; Tamb = 25 °C VCE = -5 V; IC = -10 mA; Tamb = 25 °C collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C noise figure VCE = -5 V; IC = -200 µA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz; Tamb = 25 °C Min Typ Max Unit - - -15 nA - - -5 µA - - -100 nA 220 --- 475 -200 -400 mV mV -600 - -700 -850 - -750 -820 2.5 mV mV mV mV pF - 4.5 - pF 100 - - MHz - - 10 dB BC856BMB Product data sheet All informat.


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