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BCM846BS Dataheets PDF



Part Number BCM846BS
Manufacturers nexperia
Logo nexperia
Description NPN/NPN matched double transistor
Datasheet BCM846BS DatasheetBCM846BS Datasheet (PDF)

BCM846BS NPN/NPN matched double transistor 26 June 2015 Product data sheet 1. General description NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) SurfaceMounted Device (SMD) plastic package. The transistors are fully isolated internally. 2. Features and benefits • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • AEC-Q101 qualified 3. Applications • Current mirror • Differential amplifier 4. Quick reference data .

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BCM846BS NPN/NPN matched double transistor 26 June 2015 Product data sheet 1. General description NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) SurfaceMounted Device (SMD) plastic package. The transistors are fully isolated internally. 2. Features and benefits • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • AEC-Q101 qualified 3. Applications • Current mirror • Differential amplifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IC collector current Per transistor hFE DC current gain Per device hFE1/hFE2 hFE matching VBE1−VBE2 VBE matching Conditions Min Typ Max Unit open base - - 65 V - - 100 mA VCE = 5 V; IC = 2 mA; Tamb = 25 °C 200 290 450 VCE = 5 V; IC = 2 mA; Tamb = 25 °C [1] 0.9 1 - [2] - - 2 mV [1] The smaller of the two values is taken as numerator. [2] The smaller of the two values is subtracted from the larger value. Nexperia BCM846BS NPN/NPN matched double transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter TR1 2 B base TR1 3 C collector TR2 4 E emitter TR2 5 B base TR2 6 C collector TR1 Simplified outline 654 123 TSSOP6 (SOT363) Graphic symbol 654 TR2 TR1 123 sym020 6. Ordering information Table 3. Ordering information Type number Package Name BCM846BS TSSOP6 Description plastic surface-mounted package; 6 leads Version SOT363 7. Marking Table 4. Marking codes Type number BCM846BS Marking code [1] F2% [1] % = placeholder for manufacturing site code BCM846BS Product data sheet All information provided in this document is subject to legal disclaimers. 26 June 2015 © Nexperia B.V. 2017. All rights reserved 2 / 12 Nexperia BCM846BS NPN/NPN matched double transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Per transistor VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current ICM peak collector current single pulse; tp ≤ 1 ms Ptot total power dissipation Tamb ≤ 25 °C Per device Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Min Max Unit [1] - 80 V 65 V 6V 100 mA 200 mA 200 mW [1] - 300 mW - 150 °C -55 150 °C -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Per transistor Rth(j-a) thermal resistance from junction to ambient Per device Rth(j-a) thermal resistance from junction to ambient Conditions in free air in free air Min Typ Max Unit [1] - - 625 K/W [1] - - 416 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. BCM846BS Product data sheet All information provided in this document is subject to legal disclaimers. 26 June 2015 © Nexperia B.V. 2017. All rights reserved 3 / 12 Nexperia BCM846BS NPN/NPN matched double transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Per transistor ICBO collector-base cut-off VCB = 30 V; IE = 0 A; Tamb = 25 °C current VCB = 30 V; IE = 0 A; Tj = 150 °C IEBO emitter-base cut-off VEB = 5 V; IC = 0 A; Tamb = 25 °C current hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 °C VCE = 5 V; IC = 10 µA; Tamb = 25 °C VCEsat VBEsat collector-emitter IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C saturation voltage IC = 100 mA; IB = 5 mA; pulsed; base-emitter saturation tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C VBE base-emitter voltage VCE = 5 V; IC = 10 mA; Tamb = 25 °C VBE base-emitter voltage VCE = 5 V; IC = 2 mA; Tamb = 25 °C CC collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C CE emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C NF noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz; Tamb = 25 °C VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; Tamb = 25 °C; f = 10 Hz to 15.7 kHz Per device hFE1/hFE2 hFE matching VCE = 5 V; IC = 2 mA; Tamb = 25 °C VBE1−VBE2 VBE matching [1] [1] [2] [2] [3] [4] Min Typ Max Unit - - 15 nA - - 5 µA - - 100 nA 200 290 450 - 250 - 50 200 mV - 200 400 mV - 910 - mV - 760 - mV - - 770 mV 610 660 710 mV - - 1.5 pF - 11 - pF 100 250 - MHz - 3.3 - dB - 2.8 - dB 0.9 1 - - - 2 mV [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] The smaller of the two values is taken as numerator. [4] The smaller of the two values is subtracted.


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