Document
BCM846BS
NPN/NPN matched double transistor
26 June 2015
Product data sheet
1. General description
NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) SurfaceMounted Device (SMD) plastic package. The transistors are fully isolated internally.
2. Features and benefits
• Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • AEC-Q101 qualified
3. Applications
• Current mirror • Differential amplifier
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter voltage
IC collector current
Per transistor
hFE DC current gain
Per device
hFE1/hFE2
hFE matching
VBE1−VBE2
VBE matching
Conditions
Min Typ Max Unit
open base
- - 65 V - - 100 mA
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
200 290 450
VCE = 5 V; IC = 2 mA; Tamb = 25 °C [1] 0.9 1
-
[2] - - 2 mV
[1] The smaller of the two values is taken as numerator. [2] The smaller of the two values is subtracted from the larger value.
Nexperia
BCM846BS
NPN/NPN matched double transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 E emitter TR1 2 B base TR1 3 C collector TR2 4 E emitter TR2 5 B base TR2 6 C collector TR1
Simplified outline
654
123
TSSOP6 (SOT363)
Graphic symbol
654
TR2 TR1
123 sym020
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BCM846BS
TSSOP6
Description plastic surface-mounted package; 6 leads
Version SOT363
7. Marking
Table 4. Marking codes Type number
BCM846BS
Marking code [1]
F2%
[1] % = placeholder for manufacturing site code
BCM846BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 June 2015
© Nexperia B.V. 2017. All rights reserved
2 / 12
Nexperia
BCM846BS
NPN/NPN matched double transistor
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Min Max Unit
[1] -
80 V 65 V 6V 100 mA 200 mA 200 mW
[1] -
300 mW
- 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per transistor
Rth(j-a)
thermal resistance from junction to ambient
Per device
Rth(j-a)
thermal resistance from junction to ambient
Conditions in free air
in free air
Min Typ Max Unit [1] - - 625 K/W
[1] - - 416 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BCM846BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 June 2015
© Nexperia B.V. 2017. All rights reserved
3 / 12
Nexperia
BCM846BS
NPN/NPN matched double transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A; Tamb = 25 °C
current
VCB = 30 V; IE = 0 A; Tj = 150 °C
IEBO
emitter-base cut-off
VEB = 5 V; IC = 0 A; Tamb = 25 °C
current
hFE
DC current gain
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
VCE = 5 V; IC = 10 µA; Tamb = 25 °C
VCEsat VBEsat
collector-emitter
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
saturation voltage
IC = 100 mA; IB = 5 mA; pulsed;
base-emitter saturation tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
voltage
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
VBE base-emitter voltage VCE = 5 V; IC = 10 mA; Tamb = 25 °C
VBE base-emitter voltage VCE = 5 V; IC = 2 mA; Tamb = 25 °C
CC collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C
CE emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C
fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C
NF noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz; Tamb = 25 °C
VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; Tamb = 25 °C; f = 10 Hz to 15.7 kHz
Per device
hFE1/hFE2
hFE matching
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
VBE1−VBE2
VBE matching
[1] [1] [2] [2]
[3] [4]
Min Typ Max Unit
- - 15 nA - - 5 µA - - 100 nA
200 290 450 - 250 - 50 200 mV - 200 400 mV - 910 - mV - 760 - mV - - 770 mV 610 660 710 mV - - 1.5 pF
- 11 - pF
100 250 -
MHz
- 3.3 - dB
- 2.8 - dB
0.9 1
-
- - 2 mV
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] The smaller of the two values is taken as numerator. [4] The smaller of the two values is subtracted.