BCM56DS

BCM56DS 80 V, 1 A NPN/NPN matched double transistors 10 April 2018 Product data sheet 1. General description NPN/NPN matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BCM53DS 2. Features and benefits High collector current capability IC and ICM Reduces component count Reduces pick and place costs Current gain matching 5% Application-optimized pinout AEC-Q101 qualified 3. Applications Current mirror Differential amplifier Linear voltage regulators MOSFET drivers High-side switches Power management Amplifiers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collector-emitter voltage IC ICM hFE Per device collector current peak collector current DC current gain hFE1/hFE2 DC current gain matching Conditions open base single pulse; tp ≤ 1 ms VCE = 2 V; IC = 150 mA; Tamb = 25 °C VCE = 5 V; IC = 2 mA; Tamb = 25 °C [1] Min Typ Max Unit -- --63 - 80 V 1A 2A 250 0.95 1 1.05 Nexperia BCM56DS 80 V, 1 A NPN/NPN matched double transistors Symbol VBE1−VBE2 Parameter base-emitter voltage matching Conditions [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02 [2] The smaller of the two values is subtracted from the larger value. 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B1 base TR1 2 B2 base TR2 3 C2 collector TR2 4 E2 emitter TR2 5 E1 emitter TR1 6 C1 collector TR1 Simplified outline 654 123 TSOP6 (SOT457...